Atomic and cluster ion emission from silicon in secondary-ion mass spectrometry

[1]  G. Morrison,et al.  Energy spectra of ions sputtered from elements by O+2: A comprehensive study , 1979 .

[2]  K. Wittmaack,et al.  On the mechanism of cluster emission in sputtering , 1979 .

[3]  P. Williams,et al.  Anomalous enhancement of negative sputtered ion emission by oxygen , 1978 .

[4]  G. Morrison,et al.  Detector discrimination in sims II. Ion-to-electron converter yield factors for negative ions , 1978 .

[5]  H. Werner,et al.  Molecular versus atomic secondary ion emission from solids , 1978 .

[6]  K. Wittmaack.  The use of secondary ion mass spectrometry for studies of oxygen adsorption and oxidation , 1977 .

[7]  A. Benninghoven,et al.  Empirical formula for the calculation of secondary ion yields from oxidized metal surfaces and metal oxides , 1977 .

[8]  H. Werner,et al.  Quantitative SIMS studies with a uranium matrix , 1977 .

[9]  H. Werner,et al.  Test of a quantitative approach to secondary ion mass spectrometry on glass and silicate standards , 1977 .

[10]  M. Croset,et al.  Quantitative secondary ion mass spectrometry analysis of oxygen isotopes and other light elements in silicon oxide films , 1977 .

[11]  K. Wittmaack.  High‐sensitivity depth profiling of arsenic and phosphorus in silicon by means of SIMS , 1976 .

[12]  W. O. Hofer,et al.  Cluster induced secondary electron emission , 1976 .

[13]  H. Werner,et al.  Quantitative analysis of low alloy steels by secondary ion mass spectrometry , 1976 .

[14]  A. Benninghoven,et al.  Developments in secondary ion mass spectroscopy and applications to surface studies , 1975 .

[15]  K. Wittmaack,et al.  Diatomic versus atomic secondary ion emission , 1975 .

[16]  A. Benninghoven,et al.  Comparative study of Si(111), silicon oxide, SiC and Si3N4 surfaces by secondary ion mass spectroscopy (SIMS) , 1975 .

[17]  R. Schimko,et al.  Implanted arsenic and boron concentration profiles in SiO2 layers , 1975 .

[18]  A. E. Vries,et al.  On the energy distribution of sputtered clusters , 1975 .

[19]  K. Wittmaack,et al.  Secondary ion emission from silicon and silicon oxide , 1975 .

[20]  A. E. Vries,et al.  On the energy distribution of sputtered dimers , 1974 .

[21]  C. Feldman,et al.  Mass Spectra Analyses of Impurities and Ion Clusters in Amorphous and Crystalline Silicon Films , 1973 .

[22]  R. Schimko,et al.  Concentration Profiles of Implanted Boron Ions in Silicon from Measurements with the Ion Microprobe , 1973, June 16.

[23]  C. A. Evans,et al.  Spectral Interferences in Secondary Ion Mass Spectrometry , 1973 .

[24]  A. Benninghoven,et al.  Surface investigation of solids by the statical method of secondary ion mass spectroscopy (SIMS) , 1973 .

[25]  T. Rhodin,et al.  A quantum-mechanical model for the ionization and excitation of atoms during sputtering , 1973 .

[26]  W. Poschenrieder,et al.  Observation of clusters in a sputtering ion source , 1973 .

[27]  G. Staudenmaier.  Angular dependence of clusters sputtered from a tungsten single crystal surface , 1973 .

[28]  K. Wittmaack,et al.  Implications in the use of secondary ion mass spectrometry to investigate impurity concentration profiles in solids , 1973 .

[29]  C. Feldman,et al.  The study of amorphous and crystalline silicon thin films by sputter-ion source mass spectrometry , 1972 .

[30]  N. Hilleret,et al.  Analyses de couches minces de silice par emission ionique secondaire , 1971 .

[31]  P. Joyes.  Alternations in the secondary emission of molecular ions from noble metals , 1971 .

[32]  J. Pople,et al.  Approximate Self‐Consistent Molecular Orbital Theory. III. CNDO Results for AB2 and AB3 Systems , 1966 .

[33]  L. Parts,et al.  Nitrosonium Nitrate. Isolation at 79°—205°K and Infrared Spectra of the Polymorphic Compound , 1965 .