论文信息 - MOSFETs with 9 to 13 A thick gate oxides

MOSFETs with 9 to 13 A thick gate oxides

In this work, NMOSFETs with gate oxides between 9 to 13 A have been fabricated and its behavior analyzed. An improved methodology of extracting gate oxide thickness from the MOSFET gate currents in the accumulation regime is proposed. Experimental evidence for a mobility reduction mechanism, namely Remote Charge Scattering, has been presented. The mobility was found to be degraded because of scattering by ionized impurities in the poly-gate.

J. Bokor | Chenming Hu | Tsu-Jae King | M.S. Krishnan

[1] H. Iwai,et al. 1.5 nm direct-tunneling gate oxide Si MOSFET's , 1996 .

[2] Chenming Hu,et al. Remote charge scattering in MOSFETs with ultra-thin gate dielectrics , 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

[3] Characterization of Mos Structures with Ultra-Thin Tunneling Oxynitride , 1995 .

[4] C. Hamaguchi,et al. Normal Electric Field Dependence of Electron Mobility in MOS Inversion Layer , 1986 .

[5] Kevin J. Yang,et al. Analytic model for direct tunneling current in polycrystalline silicon-gate metal–oxide–semiconductor devices , 1999 .

[6] H. Wong,et al. CMOS scaling into the nanometer regime , 1997, Proc. IEEE.

[7] K. Ando,et al. Mechanism of leakage current through the nanoscale SiO2 layer , 1994 .