Study on Density Functional Theory of Zn1-xMgxO Alloy

Geometric structure and electronic structures of Zn1-xMgxO alloy under different Mg doped concentrations have been investigated by performing the first-principle calculations based on density functional theory under the generalized gradient approximation (GGA). The calculated results show that there is substantial change in electronic structure of Mg doped MgxZn1-xO alloy, with the constant increase of Mg content, cell parameter a shall be on the gradual increase, with c on gradual decrease and band gap width of MgxZn1-xO alloy on the increase. The research findings show that the position of conduction band bottom is dependent on Mg 2p and Zn 4s. Mg doping results in drift of Mg 2p and Zn 4s toward high energy region, being the root cause for the increase in band gap width,the research results in the paper are in accordance with other experimental results. The above results provide theoretical guidance to the preparation of Zn1-xMgxO alloy in experiment.

[1]  Hiroshi Tanaka,et al.  Fabrication of wide-band-gap MgxZn1−xO quasi-ternary alloys by molecular-beam epitaxy , 2005 .

[2]  First-principles study of ground- and excited-state properties of MgO , ZnO , and CdO polymorphs , 2006, cond-mat/0604480.

[3]  T. Venkatesan,et al.  Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1−xO alloy films , 2002 .

[4]  Xiaopeng Zhao,et al.  Structure and optical properties of MgxZn1−xO nanoparticles prepared by sol–gel method , 2004 .

[5]  Gyu-Chul Yi,et al.  Metalorganic vapor-phase epitaxial growth and photoluminescent properties of Zn1−xMgxO(0⩽x⩽0.49) thin films , 2001 .

[6]  J. Zhong,et al.  Growth and structural analysis of metalorganic chemical vapor deposited (112̄0) MgxZn1−xO (0 , 2003 .

[7]  Kuei-Hsien Chen,et al.  Structural and optical properties of single crystal Zn1-xMgxO nanorods - Experimental and theoretical studies , 2007 .

[8]  Chenghua Sui,et al.  Recent progress in research on MgxZn1–xO alloys , 2006 .

[9]  J. Liang,et al.  Annealing effect on electrical properties of high-k MgZnO film on silicon , 2005 .

[10]  Akira Ohtomo,et al.  MgxZn1−xO as a II–VI widegap semiconductor alloy , 1998 .

[11]  T. Hanada,et al.  Structural variation of cubic and hexagonal MgxZn1−xO layers grown on MgO(111)∕c-sapphire , 2005 .

[12]  Masashi Kawasaki,et al.  Combinatorial Laser Molecular Beam Epitaxy (MBE) Growth of Mg–Zn–O Alloy for Band Gap Engineering , 1999 .

[13]  Akira Ohtomo,et al.  Band gap engineering based on MgxZn1−xO and CdyZn1−yO ternary alloy films , 2001 .