P-type Si-nanowire-based Field-effect Transistors for Electric Detection of a Biomarker: Matrix Metalloproteinase-9

We studied the electric detection of a biomarker by using p-type Si-nanowire-based field-effect transistors (FETs) for biological applications. A combination of electron-beam lithography and a lift-off process was utilized to fabricate individual 50-nm-thick Si nanowire FETs. The gatedependent I − VSD curves revealed that the conductance of a Si-nanowire FET increased with increasing negative VG. The conductance of the Si nanowire FET depended upon the existence of negatively charged streptavidin binding to a biotin with a peptide and Matrix metalloproteinase-9 (MMP-9), cutting the peptide. Our results suggest that Si-nanowire FETs can be used to detect MMP-9 activity.

[1]  Gengfeng Zheng,et al.  Electrical detection of single viruses. , 2004, Proceedings of the National Academy of Sciences of the United States of America.

[2]  M. Wilchek,et al.  Methods in enzymology , 1990 .

[3]  S. Wolf,et al.  Silicon Processing for the VLSI Era , 1986 .

[4]  Andrew G. Glen,et al.  APPL , 2001 .