Efficient low-loss InGaAsP/Si hybrid MOS optical modulator

Hybrid InGaAsP/Si optical modulator gives silicon photonics an efficient scheme for phase modulation. An optical modulator integrated on silicon is a key enabler for high-performance optical interconnects1,2,3,4,5,6. However, Si-based optical modulators suffer from low phase-modulation efficiency owing to the weak plasma dispersion effect in Si, which also results in large optical loss. Therefore, it is essential to find a novel modulation scheme for Si photonics. Here, we demonstrate an InGaAsP/Si hybrid metal-oxide–semiconductor (MOS) optical modulator formed by direct wafer bonding7,8. Electron accumulation at the InGaAsP MOS interface enables the utilization of the electron-induced refractive index change in InGaAsP, which is significantly greater than that in Si (refs 9,10). The presented modulator exhibits a phase-modulation efficiency of 0.047 Vcm and low optical attenuation of 0.23 dB at π phase shift at 1.55 μm wavelength, which are approximately 5 times higher and 10 times lower than Si MOS optical modulators11,12,13,14,15,16,17, respectively. This approach provides a new, high-performance phase-modulation scheme for Si photonics.

[1]  M. Paniccia,et al.  A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor , 2004, Nature.

[2]  J. Wouters,et al.  Low-voltage, low-loss, multi-Gb/s silicon micro-ring modulator based on a MOS capacitor , 2012, OFC/NFOEC.

[3]  J.-H. Han,et al.  Extremely high modulation efficiency IU-V/Si hybrid MOS optical modulator fabricated by direct wafer bonding , 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

[4]  R. G. Beausoleil,et al.  Photonic Architectures for High-Performance Data Centers , 2013, IEEE Journal of Selected Topics in Quantum Electronics.

[5]  Jurgen Michel,et al.  Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators , 2008 .

[6]  Ali A. Rezazadeh,et al.  Empirical low-field mobility model for III-V compounds applicable in device simulation codes , 2000 .

[7]  Frederic Boeuf,et al.  Silicon Photonics R&D and Manufacturing on 300-mm Wafer Platform , 2016, Journal of Lightwave Technology.

[8]  J. Bowers,et al.  High speed hybrid silicon evanescent electroabsorption modulator. , 2008, Optics express.

[9]  P. Gothoskar,et al.  An efficient MOS-capacitor based silicon modulator and CMOS drivers for optical transmitters , 2014, 11th International Conference on Group IV Photonics (GFP).

[10]  O. Hansen,et al.  Strained silicon as a new electro-optic material , 2006, Nature.

[11]  D. Miller,et al.  Strong quantum-confined Stark effect in germanium quantum-well structures on silicon , 2005, Nature.

[12]  M. Morse,et al.  High speed silicon Mach-Zehnder modulator. , 2005, Optics express.

[13]  J. Bowers,et al.  Hybrid Silicon Photonic Integrated Circuit Technology , 2013, IEEE Journal of Selected Topics in Quantum Electronics.

[14]  John E. Bowers,et al.  Forty Gb/s hybrid silicon Mach-Zehnder modulator with low chirp. , 2011, Optics express.

[15]  David J. Thomson,et al.  Silicon optical modulators , 2010 .

[16]  P. Gothoskar,et al.  Silicon Photonic Modulator Based on a MOS-Capacitor and a CMOS Driver , 2014, 2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

[17]  安達 定雄.  Physical properties of III-V semiconductor compounds : InP, InAs, GaAs, GaP, InGaAs, and InGaAsP , 1992 .

[18]  Mingbin Yu,et al.  Fabrication of low loss and high speed silicon optical modulator using doping compensation method. , 2011, Optics express.

[19]  Rajeev J. Ram,et al.  Single-chip microprocessor that communicates directly using light , 2015, Nature.

[21]  M. Webster,et al.  Low-power MOS-capacitor based silicon photonic modulators and CMOS drivers , 2015, 2015 Optical Fiber Communications Conference and Exhibition (OFC).

[22]  Richard A. Soref,et al.  Carrier-induced change in refractive index of InP, GaAs and InGaAsP , 1990 .

[23]  R. Soref,et al.  Electrooptical effects in silicon , 1987 .

[24]  Ying-Hao Kuo,et al.  A Hybrid Silicon–AlGaInAs Phase Modulator , 2008, IEEE Photonics Technology Letters.

[25]  Masataka Noguchi,et al.  High-Performance MOS Capacitor Type Si Optical Modulator, and Surface Illumination-type Ge Photodetector for Optical Interconnection , 2015 .

[26]  R. L. Barns,et al.  Band gap versus composition and demonstration of Vegard’s law for In1−xGaxAsyP1−y lattice matched to InP , 1978 .

[27]  Mitsuru Takenaka,et al.  Study on void reduction in direct wafer bonding using Al2O3/HfO2 bonding interface for high-performance Si high-k MOS optical modulators , 2016 .

[28]  Junichi Fujikata,et al.  High-speed and high-efficiency Si optical modulator with MOS junction, using solid-phase crystallization of polycrystalline silicon , 2016 .

[29]  Mitsuru Takenaka,et al.  Feasibility study of III-V/Si hybrid MOS optical modulators consisting of n-InGaAsP/Al3O3/p-Si MOS capacitor formed by wafer bonding , 2016, 2016 IEEE 13th International Conference on Group IV Photonics (GFP).

[30]  G. Duan,et al.  New advances on heterogeneous integration of III-V on silicon , 2015, 2014 The European Conference on Optical Communication (ECOC).

[31]  Jean-Pierre Weber,et al.  Optimization of the carrier-induced effective index change in InGaAsP waveguides-application to tunable Bragg filters , 1994 .

[32]  InGaAsP variable optical attenuator with lateral P-I-N junction formed by Ni-InGaAsP and Zn diffusion on III-V on insulator wafer , 2016 .

[33]  D. Thomson,et al.  High-speed carrier-depletion silicon Mach-Zehnder optical modulators with lateral PN junctions , 2014, Front. Phys..

[34]  T. Fischer.  Photoelectric Emission and Work Function of InP , 1966 .

[35]  Mitsuru Takenaka,et al.  Strain-induced enhancement of plasma dispersion effect and free-carrier absorption in SiGe optical modulators , 2013, Scientific Reports.

[36]  G. Kurczveil,et al.  Integrated finely tunable microring laser on silicon , 2016, Nature Photonics.

[37]  M. Takenaka,et al.  Low resistivity lateral P–I–N junction formed by Ni–InGaAsP alloy for carrier injection InGaAsP photonic devices , 2016 .

[38]  R. Soref,et al.  The Past, Present, and Future of Silicon Photonics , 2006, IEEE Journal of Selected Topics in Quantum Electronics.

[39]  Sadao Adachi,et al.  Material parameters of In1−xGaxAsyP1−y and related binaries , 1982 .

[40]  Zbigniew R. Struzik,et al.  Increased Non-Gaussianity of Heart Rate Variability Predicts Cardiac Mortality after an Acute Myocardial Infarction , 2011, Front. Physio..

[41]  Tatsuya Usuki,et al.  High-speed and efficient silicon modulator based on forward-biased pin diodes , 2014, Front. Phys..

[42]  Jeffrey A. Kash,et al.  Optical interconnects for high performance computing , 2012, 2009 Asia Communications and Photonics conference and Exhibition (ACP).

[43]  A. Foyt.  The electro-optic applications of InP , 1981 .