Accurate determination of channel length, series resistance and junction doping profile for MOSFET optimisation in deep submicron technologies
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[1] S. Laux,et al. Accuracy of an effective channel length/External resistance extraction algorithm for MOSFET's , 1984, IEEE Transactions on Electron Devices.
[2] G.J. Hu,et al. Gate-voltage-dependent effective channel length and series resistance of LDD MOSFET's , 1987, IEEE Transactions on Electron Devices.
[3] K. Ng,et al. The impact of intrinsic series resistance on MOSFET scaling , 1986, IEEE Transactions on Electron Devices.
[4] Y. Taur,et al. A new 'shift and ratio' method for MOSFET channel-length extraction , 1992, IEEE Electron Device Letters.