Characterization of planar ohmic contacts—The effect of position of probes on contact area
暂无分享,去创建一个
[1] J. Kuzmík,et al. A three layer model of planar alloyed ohmic contacts to n-GaAs , 1990 .
[2] W. H. Price,et al. Thermally stable ohmic contacts to n‐type GaAs. VIII. Sputter‐deposited InAs contacts , 1990 .
[3] W. H. Price,et al. Thermally stable ohmic contacts to n‐type GaAs. V. Metal‐semiconductor field‐effect transistors with NiInW ohmic contacts , 1989 .
[4] K. Kaneko,et al. Excimer‐laser annealed ohmic contacts to n‐GaAs substrates through an ultrathin reacted layer , 1987 .
[5] M. Nicolet,et al. Finite metal-sheet-resistance in contact resistivity measurements: Application to Si/TiN contacts , 1983 .
[6] M. B. Das,et al. The effects of contact size and non-zero metal resistance on the determination of specific contact resistance , 1982 .