Two-dimensional field distribution analysis of reverse biased p-n junction devices

Abstract A two-dimensional Poisson equation is solved for a reverse biased p-n junction diode structure without introducing a cumbersome movable boundary treatment of depletion layer edge determination. An investigation is made of the field distribution of a glass-passivated transistor having sidewalls perpendicular to the junction plane. The influences of the glass dielectric constants and glass charge densities will be studied. Positive charges in the glass are shown to induce an undesirable high field near the semiconductor surface and degrade the device breakdown characteristics. The peak field value due to the positive charges increases as the glass dielectric constant decreases. An estimate for permissible operating voltage is obtained for various conditions.