Low temperature growth of ultrananocrystalline diamond

Ultrananocrystalline diamond (UNCD) films were prepared by microwave plasma chemical vapor deposition using argon-rich Ar∕CH4 plasmas at substrate temperatures from ∼400 to 800°C. Different seeding processes were employed to enhance the initial nucleation density for UNCD growth to about 1011sites∕cm2. High-resolution transmission electron microscopy, near-edge x-ray absorption fine structure, visible and ultraviolet Raman spectroscopy, and scanning electron microscopy were used to study the bonding structure as a function of growth temperature. The results showed that the growth of UNCD films is much less dependent on substrate temperature than for hydrogen-based CH4∕H2 plasmas. UNCD with nearly the same nanoscale structure as those characteristic of high-temperature deposition can be grown at temperatures as low as 400°C with growth rates of about 0.2μm∕hr. The average grain size increased to about 8nm from 3 to 5nm that is characteristic of high-temperature growth, but the relative amounts of sp3 and s...

[1]  Keith N. Rosser,et al.  Low temperature diamond growth using CO2/CH4 plasmas: Molecular beam mass spectrometry and computer simulation investigations , 2001 .

[2]  A. Laikhtman,et al.  Sensitivity of near-edge x-ray absorption fine structure spectroscopy to ion beam damage in diamond films , 1999 .

[3]  D. Gruen,et al.  Temperature dependence of the growth rate for nanocrystalline diamond films deposited from an Ar/CH4 microwave plasma , 1998 .

[4]  W. Tong,et al.  Characterization of nanocrystalline diamond films by core‐level photoabsorption , 1996 .

[5]  Xin Jiang,et al.  CVD diamond films: nucleation and growth , 1999 .

[6]  A. Hatta,et al.  Effect of Oxygen Component in Magneto-Active Microwave CH4/He Plasma on Large-Area Diamond Nucleation over Si , 1999 .

[7]  J. Robertson,et al.  Interpretation of Raman spectra of disordered and amorphous carbon , 2000 .

[8]  Dieter M. Gruen,et al.  Carbon dimer, C2, as a growth species for diamond films from methane/hydrogen/argon microwave plasmas , 1995 .

[9]  J. Lawler,et al.  C2 column densities in H2/Ar/CH4 microwave plasmas , 1998 .

[10]  H. Espinosa,et al.  Fracture strength of ultrananocrystalline diamond thin films—identification of Weibull parameters , 2003 .

[11]  Christoph Wild,et al.  Low-Pressure Synthetic Diamond , 1998 .

[12]  Shui-Tong Lee,et al.  Synchrotron radiation x‐ray absorption of ion bombardment induced defects on diamond (100) , 1994 .

[13]  C. Benndorf,et al.  Low temperature CVD diamond deposition using halogenated precursors — deposition on low melting materials: Al, Zn and glass , 2001 .

[14]  E. Kondoh,et al.  Surface reaction kinetics of gas-phase diamond growth , 1993 .

[15]  A. Hoffman,et al.  Surface near-edge x-ray adsorption fine structure of hydrogenated diamond films and Di(100) surfaces studied by H+ and H− ion desorption , 1998 .

[16]  G. Hancock,et al.  Laser‐induced fluorescence of oxygen atoms in a plasma reactor , 1992 .

[17]  B. Hong,et al.  REAL TIME SPECTROELLIPSOMETRY FOR OPTIMIZATION OF DIAMOND FILM GROWTH BY MICROWAVE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION FROM CO/H2 MIXTURES , 1996 .

[18]  A. Hatta,et al.  Low-Temperature Diamond Deposition , 1998 .

[19]  R. E. Shroder,et al.  Raman scattering characterization of carbon bonding in diamond and diamondlike thin films , 1988 .

[20]  D. Zahn,et al.  Study of hydrogen and methane modification of CVD diamond by XAS at the carbon K-edge , 1998 .

[21]  S. Asher,et al.  uv Studies of Tetrahedral Bonding in Diamondlike Amorphous Carbon , 1997 .

[22]  G. Fenske,et al.  Tribological properties of nanocrystalline diamond films , 1999 .

[23]  Hydrogen desorption from chemical vapor deposited diamond films , 1995 .

[24]  Hughes,et al.  C 1s excitation studies of diamond (111). II. Unoccupied surface states. , 1986, Physical review. B, Condensed matter.

[25]  Dieter M. Gruen,et al.  NANOCRYSTALLINE DIAMOND FILMS1 , 1999 .

[26]  F. Tuinstra,et al.  Raman Spectrum of Graphite , 1970 .

[27]  Thomas Frauenheim,et al.  Tight-binding molecular-dynamics simulation of impurities in ultrananocrystalline diamond grain boundaries , 2001 .

[28]  A. Hiraki.  Electron-emitter fabricated at low temperature by diamond-nano-seeding technique , 2001 .

[29]  R. Messier,et al.  Current Issues and Problems in the Chemical Vapor Deposition of Diamond , 1990, Science.

[30]  T. Yokoyama,et al.  XANES and Raman Spectroscopic Studies of Diamond Films Synthesized by Hot Filament CVD , 1989 .

[31]  B. Marcus,et al.  Local order in CVD diamond films : Comparative Raman, x-ray-diffraction, and x-ray-absorption near-edge studies , 1998 .

[32]  J. Lawler,et al.  Spectroscopic determination of carbon dimer densities in and plasmas , 1998 .

[33]  L. Curtiss,et al.  Carbon dimers on the diamond (100) surface: Growth and nucleation , 2003 .