论文信息 - Investigation of the power dissipation during IGBT turn-off using a new physics-based IGBT compact model

Investigation of the power dissipation during IGBT turn-off using a new physics-based IGBT compact model

Abstract New compact models of the IGBTs (both non-punch through IGBT (NPTIGBT) and punch-through IGBT (PTIGBT)) are presented in this paper. The models are implemented in the SABER circuit simulator and used for a study of IGBT anode current and voltage characteristics during a device turn-off (clamped inductive load circuit with gate controlled turn-off), since these parts of the transient characteristics essentially predict the power dissipation ( V × I ) inside the device. It is shown that PTIGBTs are faster than NPTIGBTs, this becoming more apparent at higher clamp voltages.

P. A. Mawby | P. M. Igic | M. S. Towers | W. M. Jamal | S. G. J. Batcup

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