Positive Shift in Threshold Voltage for Reactive-Ion- Sputtered Al2O3/AlInN/GaN MIS-HEMT
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Amitava DasGupta | Nandita DasGupta | N. Dasgupta | A. DasGupta | G. Dutta | Sreenidhi Turuvekere | Naveen Karumuri | Gourab Dutta | Naveen Karumuri | Sreenidhi Turuvekere
[1] Wmm Erwin Kessels,et al. Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells , 2012 .
[2] C. Gaquiere,et al. Characteristics of Al/sub 2/O/sub 3//AllnN /GaN MOSHEMT , 2007 .
[3] Debdeep Jena,et al. Polarization Effects in Semiconductors , 2008 .
[4] A. Cuevas,et al. Effective surface passivation of crystalline silicon by rf sputtered aluminum oxide , 2009 .
[6] Debdeep Jena,et al. Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions , 2011 .
[7] Steven A. Ringel,et al. Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen , 2013 .
[8] Yugang Zhou,et al. High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment , 2005, IEEE Electron Device Letters.
[9] Siddharth Rajan,et al. Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces , 2013 .
[10] Amitava DasGupta,et al. Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling , 2013, IEEE Transactions on Electron Devices.
[11] J. Carlin,et al. Influence of GaN capping on performance of InAlN/AlN/GaN MOS‐HEMT with Al2O3 gate insulation grown by CVD , 2008 .
[12] Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectrics , 2011 .
[13] Sylvain Delage,et al. Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technological process , 2011, International Journal of Microwave and Wireless Technologies.
[14] D. Gregušová,et al. AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with 4 nm thick Al2O3 gate oxide , 2007 .