Semiconductor device with vertical channel transistor and low sheet resistance and method for fabricating the same

The present invention is to provide a semiconductor device and a method of manufacturing the same having a vertical transistor to reduce the overall resistance of the word lines to implement a high-speed operation, a method for manufacturing a semiconductor device of the present invention is provided with a pillar on the substrate forming a plurality of the pillar structure; The pillar forming a gate electrode surrounding each of the outer wall; Forming an insulating film which covers the one of side walls of the gate electrode neighboring of the gate electrode; And word lines that have a single layer structure of the plurality of the pillar extends in either direction between structure adjacent pillar structure of the continuous metal film type, electrically connected to the other one of the gate electrodes neighboring the one of the gate electrode including forming, the invention is a metal film - by forming the metal film in the form of a word line and to reduce the sheet resistance of the word lines effectively, and thus it is advantageous to implement the high-speed operation characteristics of the element. A vertical-channel transistor, a word line, a metal film, the sheet resistance, the pillar