Design of integrated LOCOS waveguide photodetector on SOI

It is now established that defects introduced via ion implantation may act as generating centers in silicon waveguide structures and consequently enhance photosensitivity at wavelengths in the region of 1550 nm. Although several integrated p-i-n waveguide photodiode structures have been presented which exploit this behavior, no attempt has been made to model the generation process and thus optimize device design. We report a model that has been implemented using SILVACO's ATLAS software, and reproduces the observed behavior in the aforementioned device structures. By varying parameters such as the dimensions of the device and the implantation conditions, the responsivity can be maximized. In particular, we have designed an integrated structure centered on a 3 µm wide waveguide created by the LOCOS (Local Oxidation of Silicon) technique on lightly p-doped Silicon-on-Insulator. A self aligned n+ polysilicon contact is placed above the ridge, causing the majority of the depletion to overlap with the optical mode. Symmetric p+ regions are placed on either side of the waveguide, separated by a distance selected to optimize responsivity without causing excess loss. This presents a vast improvement over previous structures of its size, having a predicted responsivity in excess of 50 mA/W at a 2V reverse bias.

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