论文信息 - The detrimental influence of stacking faults on the refresh time of MOS memories

The detrimental influence of stacking faults on the refresh time of MOS memories

Abstract The reverse current of diodes and the storage capability of MOS capacitors were investigated and the detrimental influence of stacking faults in the respective active area is demonstrated. In the case of the relaxation time of MOS capacitors it is shown that their deterioration can be related to the number of the stacking faults in the MOS capacitors resulting in a deterioration of the refresh behaviour of dynamic memories. The influence of one single stacking fault on the dynamic behaviour of a MOS capacitor is demonstrated. From transmission electron microscopy (TEM) and neutron activation analysis it is concluded that stacking faults decorated by Cu or Fe are most harmful to the refresh behaviour.

H. Strack | K. R. Mayer | B. O. Kolbesen | B. Kolbesen | H. Strack

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