10.3 m/spl Omega/-cm/sup 2/, 2 kV Power DMOSFETs in 4H-SiC
暂无分享,去创建一个
A. Agarwal | Sei-Hyung Ryu | J. Palmour | S. Krishnaswami | J. Richmond | M. Das | B. Hull | B. Heath | J. Scofield | A. Agarwal | J. Scofield | S. Ryu | S. Krishnaswami | B. Hull | J. Richmond | M. Das | J. Palmour | B. Heath
[1] Mrinal K. Das,et al. Recent Advances in (0001) 4H-SiC MOS Device Technology , 2004 .
[2] S. Ryu,et al. Power MOSFETs in 4H-SiC: Device Design and Technology , 2004 .
[3] E. Arnold. Charge-sheet model for silicon carbide inversion layers , 1999 .
[4] L. Feldman,et al. Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide , 2000 .
[5] 4H-SIC Dmosfets for High Frequency Power Switching Applications , 2003 .
[6] J. Cooper,et al. A self-aligned process for high-voltage, short-channel vertical DMOSFETs in 4H-SiC , 2004, IEEE Transactions on Electron Devices.
[7] Anant K. Agarwal,et al. 4H-SiC DMOSFETs for High Speed Switching Applications , 2005 .
[8] A. Huang. New unipolar switching power device figures of merit , 2004, IEEE Electron Device Letters.