论文信息 - High accuracy modeling of photodiode quantum efficiency.

High accuracy modeling of photodiode quantum efficiency.

We propose a new silicon photodiode model optimized for high-accuracy measurement usage. The new model differs from previous models in that the contribution to the quantum efficiency from the diode front region is described by an integral transform of the equilibrium minority carrier concentration. This description is accurate as long as the recombination of excess minority carriers in the front region occurs only at the front surface and the diode is operating linearly.

H. Baltes | J. Geist | J Geist | H Baltes

[1] T. Hansen,et al. Silicon UV-Photodiodes Using Natural Inversion Layers , 1978 .

[2] Herbert S. Bennett,et al. Hole and electron mobilities in heavily doped silicon: comparison of theory and experiment , 1983 .

[3] Jeremiah R. Lowney,et al. Comparison of models of the built‐in electric field in silicon at high donor densities , 1984 .

[4] W. Budde,et al. Multidecade linearity measurements on Si photodiodes. , 1979, Applied optics.

[5] J. Verdebout. Semiquantitative model for the oxide bias experiment and its application to the study of p+ nn+ photodiode degradation. , 1984, Applied optics.

[6] Jon Geist,et al. Silicon photodiode front region collection efficiency models , 1980 .

[7] H. C. de Graaff,et al. Measurements of bandgap narrowing in Si bipolar transistors , 1976 .

[8] J. A. del Alamo,et al. Measuring and modeling minority carrier transport in heavily doped silicon , 1985 .

[9] J. Geist,et al. Silicon photodiode absolute spectral response self-calibration. , 1980, Applied optics.

[10] J. Geist,et al. The near ultraviolet quantum yield of silicon , 1983 .

[11] H. Baltes,et al. Analytic representation of the silicon absorption coefficient in the indirect transition region. , 1988, Applied optics.

[12] A. R. Schaefer,et al. Spectral response self-calibration and interpolation of silicon photodiodes. , 1980, Applied optics.