200-nm InGaAs/InP type I DHBT employing a dual-sidewall emitter process demonstrating ƒmax ≫ 800 GHz and ƒτ = 360 GHz
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Amy W. K. Liu | J. Fastenau | M. Rodwell | B. Thibeault | E. Lobisser | V. Jain | Z. Griffith | D. Loubychev | Ying Wu | A. Snyder