Overview on the main parameters and technology of modern Silicon Photomultipliers

Abstract In this paper, we give an overview of the main properties and technological implementation of densely packed Single-photon Avalanche Diode arrays, which are commonly known as Silicon Photomultipliers, or SiPMs. These detectors feature high internal gain, single-photon sensitivity, a high Photon Detection Efficiency, proportional response to weak and fast light flashes, excellent timing resolution, low bias voltage, ruggedness and insensitivity to magnetic field. They compare favorably to the traditional Photomultiplier Tube in several applications. In this overview paper, we go through the SPAD/SiPM theory of operation, the modern SiPM implementations and the typical technological options to build the sensor. This is done in conjunction with the description of the main SiPM parameters, such as the Photon Detection Efficiency, the electrical properties, the primary and correlated noise sources and the Single Photon Time Resolution.

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