De-embedding transmission line measurements for accurate modeling of IC designs

A new technique to de-embed the contributions of parasitic structures from transmission line measurements is presented and applied to microstrip lines fabricated in 90- and 130-nm RF-CMOS technologies. De-embedded measurements are used to extract characteristic impedance, attenuation constant, group delay, and effective permittivity. The effective thickness of the ground plane is demonstrated to be as important as the thickness of the top metal layer in minimizing interconnect loss. Furthermore, it is confirmed that metal area densities as low as 65% are adequate for the ground plane of microstrip lines.

[1]  Norman R. Franzen,et al.  A New Procedure for System Calibration and Error Removal in Automated S-Parameter Measurements , 1975, 1975 5th European Microwave Conference.

[2]  G. Matthaei Modern transmission line theory and applications , 1981, Proceedings of the IEEE.

[3]  R. Kaul,et al.  Microwave engineering , 1989, IEEE Potentials.

[4]  D.F. Williams,et al.  Characteristic impedance determination using propagation constant measurement , 1991, IEEE Microwave and Guided Wave Letters.

[5]  W. R. Eisenstadt,et al.  S-parameter-based IC interconnect transmission line characterization , 1992 .

[6]  P. Heymann,et al.  De-embedding of MMIC transmission-line measurements , 1994, 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).

[7]  H. Grabinski,et al.  An accurate determination of the characteristic impedance of lossy lines on chips based on high frequency S-parameter measurements , 1996, Proceedings 1996 IEEE Multi-Chip Module Conference (Cat. No.96CH35893).

[8]  Dylan F. Williams,et al.  Accurate characteristic impedance measurement on silicon , 1998, 1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192).

[9]  J. Pelloie,et al.  A new method for characteristic impedance determination on lossy substrate , 2000, 2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017).

[10]  Jiming Song,et al.  A de-embedding technique for interconnects , 2001, IEEE 10th Topical Meeting on Electrical Performance of Electronic Packaging (Cat. No. 01TH8565).

[11]  K. Ohata,et al.  Wireless 1.25 Gb/s transceiver module at 60 GHz-band , 2002, 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315).

[12]  Dong-Ho Han,et al.  Hybrid method for frequency-dependent lossy coupled transmission line characterization and modeling , 2003, Electrical Performance of Electrical Packaging (IEEE Cat. No. 03TH8710).

[13]  B. Floyd,et al.  60GHz transceiver circuits in SiGe bipolar technology , 2004, 2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519).

[14]  Sorin P. Voinigescu,et al.  A 49-Gb / s , 7-Tap Transversal Filter in 0 . 18 μ m SiGe BiCMOS for Backplane Equalization Altan Hazneci , 2004 .

[15]  S.P. Voinigescu,et al.  49-Gb/s, 7-tap transversal filter in 0.18 /spl mu/m SiGe BiCMOS for backplane equalization , 2004, IEEE Compound Semiconductor Integrated Circuit Symposium, 2004..

[16]  H. Tran,et al.  A 10 Gb/s equalizer with integrated clock and data recovery for optical communication systems , 2005 .

[17]  A. Mangan MILLIMETRE-WAVE DEVICE CHARACTERIZATION FOR NANO-CMOS IC DESIGN , 2005 .

[18]  B. Karajica,et al.  An 80-Gb/s 2/sup 31/-1 pseudorandom binary sequence generator in SiGe BiCMOS technology , 2005, IEEE Journal of Solid-State Circuits.