Alloy‐scattering dependence of electron mobility in the ternary gallium, indium, and aluminum nitrides

Based on Phillips’ electronegativity theory [Rev. Mod. Phys. 42, 317 (1970)] we have determined the alloy scattering potential for the ternary nitrides, Ga1−xAlxN, In1−xGaxN, and In1−xAlxN, and hence the 300 and 77 K electron mobilities through a variational principle calculation. Alloy scattering is important in In1−xGaxN, and In1−xAlxN, both of which show a significant composition ‘‘bowing’’ in electron drift mobility, even at 300 K. This contribution is not important in Ga1−xAlxN. Acoustic phonon scattering is also significant at 300 K, in contrast to the situation obtained in GaAs‐based ternaries.

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