Ohmic I V characteristics in semi-insulating semiconductor diodes
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[1] Y. N. Mohapatra,et al. Compensating defect in deep buried layers produced by MeV heavy ions in n-silicon , 1997 .
[2] Tupei Chen,et al. Reverse I–V characteristics of Au/semi-insulating GaAs(1 0 0) , 1997 .
[3] B. Jones,et al. Numerical analysis of charge transport in semi-insulating GaAs with two contacts , 1996 .
[4] H. Hartnagel,et al. Comparison of photo- and plasma-assisted passivating process effects on GaAs devices by means of low-frequency noise measurements , 1995 .
[5] T. C. Lee,et al. Reverse I-V characteristics of Au/semi-insulating InP (100) , 1993 .
[6] Cavicchi,et al. Experimental evidence for relaxation phenomena in high-purity silicon. , 1989, Physical review letters.
[7] H. Casey,et al. Carrier Transport and Potential Distributions for a Semiconductor p-n Junction in the Relaxation Regime , 1971 .