Microstructural, mechanical, fractural and electrical characterization of thinned and singulated silicon test die

This paper investigates the effects of thinning on different properties of silicon test die. Silicon test wafers of different thicknesses (525, 250, 100 and 50 µm) were thinned using a mechanical grinding process. The wafers were diced by using a specialized dicing saw and by a laser to study the effect of singulation. The laser dicing adversely affected the mechanical properties, while the fracture strength and flexibility increased with a reducing die thickness for mechanical grind test die. Fractured dies were macro and microscopically examined indicating different modes of failure depending on the fracture load. The electrical parameters of the test die were investigated and showed no adverse affect on the properties due to the thinning process.

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