Strain and Temperature Dependence of Defect Formation at AlGaN/GaN High-Electron-Mobility Transistors on a Nanometer Scale

We use depth-resolved cathodoluminescence spectroscopy (DRCLS), Kelvin probe force microscopy (KPFM), and surface photovoltage spectroscopy (SPS) on a nanometer scale to map the temperature, strain, and defects inside GaN high-electron-mobility transistors. DRCLS maps temperature at localized depths, particularly within the 2-D electron gas region during device operation. KPFM maps surface electric potential across the device, revealing lower potential patches that decrease rapidly with increasing off-state stress. CL spectra acquired at these patches exhibit defect emissions that increase with both on- and off-state stresses and that increase with decreasing surface potential. SPS also reveals features of deep level gap states generated after device operation that reduce near-band-edge emission and increase surface band bending. Our nanoscale measurements are consistent with defect generation by inverse piezoelectric field-induced stress at the gate edge on the drain side at high voltage.

[1]  T. Merz,et al.  Nanostructure growth-induced defect formation and band bending at ZnO surfaces , 2011 .

[2]  Umesh K. Mishra,et al.  AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes , 2011, Microelectron. Reliab..

[3]  Jungwoo Joh,et al.  Role of stress voltage on structural degradation of GaN high-electron-mobility transistors , 2011, Microelectron. Reliab..

[4]  Jinhyung Kim,et al.  AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stress , 2011, Microelectron. Reliab..

[5]  S. A. Ringel,et al.  Spatially-discriminating trap characterization methods for HEMTs and their application to RF-stressed AlGaN/GaN HEMTs , 2010, 2010 International Electron Devices Meeting.

[6]  U. Mishra,et al.  Field-induced strain degradation of AlGaN/GaN high electron mobility transistors on a nanometer scale , 2010 .

[7]  J. C. Huang,et al.  Mechanical response of GaN film and micropillar under nanoindentation and microcompression , 2010 .

[8]  Gaudenzio Meneghesso,et al.  Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors , 2010 .

[9]  Umesh K. Mishra,et al.  Importance of impurity diffusion for early stage degradation in AlGaN/GaN high electron mobility transistors upon electrical stress , 2010 .

[10]  Ronald D. Schrimpf,et al.  Theory of hot-carrier-induced phenomena in GaN high-electron-mobility transistors , 2010 .

[11]  Martin Kuball,et al.  Simultaneous measurement of temperature and thermal stress in AlGaN/GaN high electron mobility transistors using Raman scattering spectroscopy , 2009 .

[12]  Feng Gao,et al.  A model for the critical voltage for electrical degradation of GaN high electron mobility transistors , 2009, 2009 Reliability of Compound Semiconductors Digest (ROCS).

[13]  Jungwoo Joh,et al.  GaN HEMT reliability , 2009, Microelectron. Reliab..

[14]  Umesh K. Mishra,et al.  Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors , 2009 .

[15]  Dimitry Zarkh,et al.  GaN HEMT Reliability Through the Decade , 2009 .

[16]  Paul Saunier,et al.  Physical degradation of GaN HEMT devices under high drain bias reliability testing , 2009, Microelectron. Reliab..

[17]  Martin Kuball,et al.  Current collapse in AlGaN/GaN transistors studied using time-resolved Raman thermography , 2008 .

[18]  Seong-Yong Park,et al.  TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs , 2008, IEEE Electron Device Letters.

[19]  Impact of near-surface native point defects, chemical reactions, and surface morphology on ZnO interfaces , 2008 .

[20]  G. Verzellesi,et al.  Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives , 2008, IEEE Transactions on Device and Materials Reliability.

[21]  J. D. del Alamo,et al.  Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors , 2008, IEEE Electron Device Letters.

[22]  Z. J. Yang,et al.  Mechanical properties of AlxGa1−xN films with high Al composition grown on AlN/sapphire templates , 2007 .

[23]  S. Cassette,et al.  SThM Temperature Mapping and Nonlinear Thermal Resistance Evolution With Bias on AlGaN/GaN HEMT Devices , 2007, IEEE Transactions on Electron Devices.

[24]  Hangfeng Ji,et al.  Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures , 2006, IEEE Transactions on Electron Devices.

[25]  S. Keller,et al.  Effect of ohmic contacts on buffer leakage of GaN transistors , 2006, IEEE Electron Device Letters.

[26]  Biaxial stress dependence of the electrostimulated near-band-gap spectrum of GaN epitaxial film grown on (0001) sapphire substrate , 2006 .

[27]  K. Hilton,et al.  Piezoelectric strain in AlGaN∕GaN heterostructure field-effect transistors under bias , 2006 .

[28]  Peter J Heard,et al.  Thermal mapping of defects in AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy , 2005 .

[29]  H. Morkoç,et al.  Luminescence properties of defects in GaN , 2005 .

[30]  U. Mishra,et al.  30-W/mm GaN HEMTs by field plate optimization , 2004, IEEE Electron Device Letters.

[31]  Lester F. Eastman,et al.  Slow transients observed in AlGaN/GaN HFETs: effects of SiN/sub x/ passivation and UV illumination , 2003 .

[32]  D. Chuu,et al.  Analysis of physical properties of III-nitride thin films by nanoindentation , 2003 .

[33]  L. Brillson.  Nanoscale luminescence spectroscopy of defects at buried interfaces and ultrathin films , 2001 .

[34]  U. Mishra,et al.  The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs , 2001 .

[35]  L. Brillson,et al.  Luminescence spectroscopy of GaN in the high-temperature regime from room temperature to 900 °C , 2000 .

[36]  E. Monroy,et al.  Nanoindentation on AlGaN thin films , 1999 .