An integrated approach to power electronics systems

Power electronics systems are typically designed and manufactured using nonstandard parts, which results in labor-intensive manufacturing processes and increased cost. As a possible way to overcome these problems, this paper provides an overview of an integrated approach to design and realize power electronics systems, aiming at improved performance, reliability, manufacturability and cost effectiveness. A brief discussion is presented on the technology barriers that limit the rapid growth of power electronics, such as passive components and packaging techniques. It is also discussed the technology advancements needed to improve the characteristics of power electronics systems, such as increased levels of integration, standardization of parts and improved packaging techniques for enhanced thermal management and electrical performance. The technologies being developed for the realization of integrated systems include planar metalization to allow three-dimensional structural integration of power devices and control functions, integration of power passives, and integration of electrical/thermal design tools.

[1]  R. Reeves,et al.  Choke - capacitor hybrid as a fluorescent-lamp ballast , 1975 .

[2]  G. Deboy,et al.  COOLMOS/sup TM/-a new milestone in high voltage power MOS , 1999, 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312).

[3]  Fred C. Lee,et al.  Embedded power technology for IPEMs packaging applications , 2001, APEC 2001. Sixteenth Annual IEEE Applied Power Electronics Conference and Exposition (Cat. No.01CH37181).

[4]  D. Boroyevich,et al.  Integrated electrical and thermal analysis of integrated power electronics modules using iSIGHT , 2001, APEC 2001. Sixteenth Annual IEEE Applied Power Electronics Conference and Exposition (Cat. No.01CH37181).

[5]  Jun Zeng,et al.  Optimization of the body-diode of power MOSFETs for high efficiency synchronous rectification , 2000, 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).

[6]  Steven T. Peake,et al.  Power semiconductor devices , 1995 .

[7]  J. E. Evetts,et al.  Effects of the shape anisotropy on the giant magnetoresistance properties , 2001 .

[8]  H. Goldstein.  Packages go vertical , 2001 .

[9]  C.A.T. Salama,et al.  A trench lateral power MOSFET using self-aligned trench bottom contact holes , 1997, International Electron Devices Meeting. IEDM Technical Digest.

[10]  Peng Xu,et al.  A novel integrated current doubler rectifier , 2000, APEC 2000. Fifteenth Annual IEEE Applied Power Electronics Conference and Exposition (Cat. No.00CH37058).

[11]  J.D. van Wyk,et al.  Some limits of integrated LCT modules for resonant converters at 1 MHz , 1999, Conference Record of the 1999 IEEE Industry Applications Conference. Thirty-Forth IAS Annual Meeting (Cat. No.99CH36370).

[12]  J. D. van Wyk,et al.  Electromagnetic energy propagation in power electronic converters: toward future electromagnetic integration , 2001, Proc. IEEE.

[13]  D. Boroyevich,et al.  Power electronics technology: present trends and future developments , 2001, Proceedings of the IEEE.

[14]  E. Hill,et al.  Geometry effects on low frequency noise in giant magnetoresistance (GMR) sensors , 1998 .

[15]  T. Chow,et al.  A planarized high-voltage silicon trench sidewall oxide-merged PIN/Schottky (TSOX-MPS) rectifier , 1999, 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312).

[16]  T. Jahns,et al.  Flexible dv/dt and di/dt control method for insulated gate power switches , 2001, Conference Record of the 2001 IEEE Industry Applications Conference. 36th IAS Annual Meeting (Cat. No.01CH37248).

[17]  R. Natarajan,et al.  Flip-chip flex-circuit packaging for 42 V/16 A integrated power electronics module applications , 2002, APEC. Seventeenth Annual IEEE Applied Power Electronics Conference and Exposition (Cat. No.02CH37335).

[18]  B.J. Baliga,et al.  Analysis of a high-voltage merged p-i-n/Schottky (MPS) rectifier , 1987, IEEE Electron Device Letters.

[19]  J.A. Ferreira,et al.  Some present and future trends in power electronic converters , 1992, Proceedings of the 1992 International Conference on Industrial Electronics, Control, Instrumentation, and Automation.

[20]  J.D. van Wyk,et al.  An integrated resonant module for a high power soft-switching converter , 2001, 2001 IEEE 32nd Annual Power Electronics Specialists Conference (IEEE Cat. No.01CH37230).

[21]  Enric Cabruja,et al.  MCM-D package for power applications , 2000, IWIPP 2000. International Workshop on Integrated Power Packaging (Cat. No.00EX426).

[22]  Karen A. Thole,et al.  Electrical and Thermal Layout Design and Optimization Considerations for DPS Active IPEM , 2002 .

[23]  J.D. Van Wyk,et al.  Design of planar integrated passive module for zero-voltage switched asymmetrical half bridge PWM converter , 2001, Conference Record of the 2001 IEEE Industry Applications Conference. 36th IAS Annual Meeting (Cat. No.01CH37248).

[24]  A. V. Pohm,et al.  Ultra-low hysteresis and self-biasing in GMR sandwich sensor elements , 2001 .

[25]  Bantval J. Baliga.  Evolution and status of smart power technology , 1993, Proceedings Eighth Annual Applied Power Electronics Conference and Exposition,.

[26]  Fred Barlow,et al.  An overview to integrated power module design for high power electronics packaging , 2000 .

[27]  Bantval J. Baliga,et al.  The future of power semiconductor device technology , 2001, Proc. IEEE.

[28]  Y. Kuraishi,et al.  Integrated MR sensors for automobile , 1994 .

[29]  B. J. Baliga,et al.  Trends in power semiconductor devices , 1996 .