论文信息 - Artificial neural network prediction of the band gap and melting point of binary and ternary compound semiconductors

Artificial neural network prediction of the band gap and melting point of binary and ternary compound semiconductors

Abstract In this paper, an artificial neural network trained by experimental data has been used to predict the values of the band gap and melting point of III–V, II–VI binary and I–III–VI 2 , II–IV–V 2 ternary compound semiconductors. The calculated results were in good agreement with the experimental ones.

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