论文信息 - Blue-Violet Inner Stripe Laser Diodes Using Lattice Matched AlInN as Current Confinement Layer for High Power Operation

Blue-Violet Inner Stripe Laser Diodes Using Lattice Matched AlInN as Current Confinement Layer for High Power Operation

We report on a novel method using lattice matched AlInN as the current confinement layer for inner stripe laser diodes. Optimisation of the sample preparation techniques and metal organic chemical vapor deposition (MOCVD) regrowth conditions resulted in an inner stripe laser diode with threshold current density of ~3.3–3.5 kA/cm2 and slope efficiency of 1.6 W/A. The cw lifetime and other characteristics of the inner stripe laser diode are discussed. Simulation data have also shown that this structure is beneficial for reducing operating voltage when compared to a conventional ridge waveguide structure.

[1] Takashi Mukai,et al. High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates , 2000 .

[2] M. Willander,et al. III–nitrides: Growth, characterization, and properties , 2000 .

[3] Masao Ikeda,et al. Recent progress in high-power blue-violet lasers , 2003 .

[4] Takashi Mukai,et al. Recent progress of high-power GaN-based laser diodes , 2007, SPIE OPTO.

[5] Jeremy J. Baumberg,et al. Current status of AlInN layers lattice-matched to GaN for photonics and electronics , 2007 .

[6] Takeshi Akagawa,et al. High-power operation of inner-stripe GaN-based blue-violet laser diodes , 2007, SPIE OPTO.

[7] C. Sasaoka,et al. Highly reliable blue‐violet inner stripe laser diodes using planar regrowth of AlGaN/GaN superlattice cladding layer , 2007 .

[8] J. Carlin,et al. Blue laser diodes including lattice-matched Al 0.83 In 0.17 N bottom cladding layer , 2008 .

[9] A. Avramescu,et al. True-blue InGaN laser for pico size projectors , 2008, SPIE OPTO.

[10] Wee Kian Toh,et al. Tunable dual-band planar antenna , 2008 .

[11] R. H. Jansen,et al. AlInN/GaN HEMTS on sapphire : dc and pulsed characterisation , 2008 .