Strain effects on GaxIn1−xAs/InP single quantum wells grown by organometallic vapor‐phase epitaxy with 0≤x≤1

Single‐quantum‐well structures were grown by atmospheric pressure organometallic vapor‐phase epitaxy, with GaxIn1−xAs layers (0≤x≤1) coherently strained to match the lattice parameter of the InP barrier layers in the (100) growth plane. The strain effects on the band lineups were analyzed using the ‘‘model solid’’ theory of Van de Walle and Martin. The hydrostatic strain component for alloys with x≊1 is shown to be sufficient to marginally convert the type‐II lineups for the unstrained case to type I. The band lineups remain type I for x≊0. Considering the effect of strain, the ‖ (3)/(2) , (1)/(2) 〉 valence subband becomes a slowly varying function of x. Band offsets are predicted over the entire alloy composition and compared with the reported data. The photoluminescence (10 K) peak energies for the 100‐A GaxIn1−xAs/InP single quantum wells compare quite favorably with the calculated strained band gap versus x. For nominal monolayer quantum wells, the peak energies are slightly above 1.1 eV over the enti...

[1]  Fred H. Pollak,et al.  Piezo-Electroreflectance in Ge, GaAs, and Si , 1968 .

[2]  J. W. Matthews,et al.  Defects in epitaxial multilayers , 1974 .

[3]  Manijeh Razeghi,et al.  Optical and crystallographic properties and impurity incorporation of GaxIn1−xAs (0.44 , 1983 .

[4]  S. Forrest,et al.  Relationship between the conduction‐band discontinuities and band‐gap differences of InGaAsP/InP heterojunctions , 1984 .

[5]  S. Yamada,et al.  Nonparabolic subband structure of Ga0.47In0.53As‐InP quantum wells , 1985 .

[6]  Gerald B. Stringfellow,et al.  Effect of mismatch strain on band gap in III‐V semiconductors , 1985 .

[7]  G. Osbourn.  Strained-layer superlattices: A brief review , 1986 .

[8]  R. Lang,et al.  Effect of conduction‐band nonparabolicity on quantized energy levels of a quantum well , 1986 .

[9]  Strain‐dependence of localized states in quantum‐well structures , 1986 .

[10]  P. Voisin.  Misfit strains in semiconductor superlattices , 1986 .

[11]  O'Reilly,et al.  Theory of the hole subband dispersion in strained and unstrained quantum wells. , 1986, Physical review. B, Condensed matter.

[12]  W. Tsang,et al.  Extremely high quality Ga0.47In0.53As/InP quantum wells grown by chemical beam epitaxy , 1986 .

[13]  Gérald Bastard,et al.  Electronic states in semiconductor heterostructures , 1986 .

[14]  R. People,et al.  Erratum: Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures [Appl. Phys. Lett. 47, 322 (1985)] , 1986 .

[15]  M. Gal,et al.  Photoluminescence in strained InGaAs‐GaAs heterostructures , 1987 .

[16]  R. People.  Band alignments for pseudomorphic InP/InxGa1−xAs heterostructures for growth on (001)InP , 1987 .

[17]  Thorvald G. Andersson,et al.  Variation of the critical layer thickness with In content in strained InxGa1−xAs‐GaAs quantum wells grown by molecular beam epitaxy , 1987 .

[18]  P. Bhattacharya,et al.  Enhancement in excitonic absorption due to overlap in heavy‐hole and light‐hole excitons in GaAs/InAlGaAs quantum well structures , 1987 .

[19]  Songcheol Hong,et al.  Theoretical studies of polarization dependent electro-optical modulation in lattice matched and strained multi-quantum well structures , 1987 .

[20]  M. S. Skolnick,et al.  InGaAs‐InP multiple quantum wells grown by atmospheric pressure metalorganic chemical vapor deposition , 1987 .

[21]  Gerald B. Stringfellow,et al.  Atomic steps in thin GaInAs/lnP quantum‐well structures grown by organometallic vapor phase epitaxy , 1988 .

[22]  K. Lau,et al.  Tailoring of hole eigenenergies in strained GaAsP/AlGaAs single quantum wells grown by atmospheric pressure organometallic chemical vapor deposition , 1988 .

[23]  Van de Walle CG,et al.  Electronic properties of the (100) (Si)/(Ge) strained-layer superlattices. , 1988, Physical review. B, Condensed matter.

[24]  Allan,et al.  Theoretical calculation of band-edge discontinuities near a strained heterojunction: Application to (In,Ga)As/GaAs. , 1988, Physical review. B, Condensed matter.

[25]  M. Panish,et al.  Strained‐layer Ga1−xInxAs/InP avalanche photodetectors , 1988 .

[26]  Bhattacharya,et al.  Theoretical and experimental studies of optical absorption in strained quantum-well structures for optical modulators. , 1988, Physical review. B, Condensed matter.

[27]  I. J. Fritz,et al.  GaAs/(In,Ga)As, p‐channel, multiple strained quantum well field‐effect transistors with high transconductance and high peak saturated drain current , 1988 .

[28]  Electronic properties of two-dimensional electron gas in pseudomorphic InxGa1−xAs/N-In0.52Al0.48As heterostructures , 1989 .

[29]  D. Nolte.  Band offsets for pseudomorphic InP/GaAs , 1989 .

[30]  R. Cavicchi,et al.  Admittance spectroscopy measurement of band offsets in strained layers of InxGa1−xAs grown on InP , 1989 .

[31]  J. Gerard,et al.  Optical properties of some III–V strained-layer superlattices , 1989 .

[32]  G. Stillman,et al.  Internal photoemission and band discontinuities at Ga0.47In0.53As‐InP heterojunctions , 1989 .