Corrosion of III-V compounds; a comparative study of GaAs and InP: Part I. Electrochemical characterization based on Tafel plot measurements

[1]  P. Allongue,et al.  Study of reaction coupling and interfacial kinetics at semiconductor electrodes by band edge shift measurements , 1991 .

[2]  H. Kühne,et al.  Charge transfer and recombination kinetics at photoelectrodes: A quantitative evaluation of impedance measurements , 1991 .

[3]  A. V. Rao,et al.  In Situ Fourier‐Transform Electromodulated Infrared Study of Porous Silicon Formation: Evidence for Solvent Effects on the Vibrational Linewidths , 1991 .

[4]  P. Allongue,et al.  Primary Reactions in the Photocorrosion of CdSe Through Photocapacitance Measurements , 1991 .

[5]  S. Pons,et al.  Photocorrosion of n-Si in ammonium fluoride solutions: an investigation by in-situ Fourier transform infrared spectroscopy , 1990 .

[6]  H. Gerischer The impact of semiconductors on the concepts of electrochemistry , 1990 .

[7]  L. Peter,et al.  Photocurrent multiplication during photodissolution of n-Si in NH4F: Deconvolution of electron injection steps by intensity modulated photocurrent spectroscopy , 1990 .

[8]  K. Heckner,et al.  Dissolution experiments at irradiated GaP electrodes by means of labelled phosphorous , 1990 .

[9]  A. Etcheberry,et al.  Electron excitation during anodic decomposition of III–V compounds induced by hole injecting species (Ce4+) , 1990 .

[10]  H. Kühne,et al.  Tafel Plots from Illuminated Photoelectrodes A New Insight Into Charge Transfer Mechanism , 1990 .

[11]  D. Vanmaekelbergh,et al.  Relation between chemical and electrochemical steps in the anodic decomposition of III-V semiconductor electrodes : a comprehensive model , 1990 .

[12]  H. Goossens,et al.  The influence of the band edge position upon the reduction kinetics and the etching behaviour at the GaP-Fe(CN)3−6 interface , 1990 .

[13]  D. Vanmaekelbergh,et al.  Thermal electron excitation as a probe for chemical and electrochemical steps in the anodic dissolution of III–V semiconductor electrodes , 1989 .

[14]  D. Vanmaekelbergh,et al.  Anodic stabilization and decomposition mechanisms in semiconductor (photo)-electrochemistry , 1989 .

[15]  Reshef Tenne,et al.  On the kinetics of charge transfer between an illuminated CdSe electrode and polysulphide electrolyte , 1989 .

[16]  P. Allongue,et al.  Semiconductor electrodes modified by electrodeposition of discontinuous metal films: Part I. Role of the film morphology , 1989 .

[17]  D. Lincot,et al.  Behaviour of cadmium telluride in aqueous solutions under reductive conditions: Part 2. Ellipsometric studies of the cathodic decomposition , 1989 .

[18]  A. Etcheberry,et al.  Charge-transfer kinetics at an indium phosphide semiconductor electrode: Hole injection process in the presence of the Ce4+/Ce3+ couple , 1989 .

[19]  D. Lincot,et al.  Behaviour of cadmium telluride in aqueous solutions under reductive conditions , 1989 .

[20]  N. Lewis,et al.  Studies of the n-GaAs/KOH−Se22−−Se2− semiconductor/liquid junction , 1989 .

[21]  P. Allongue,et al.  Charge Transfer Process at Illuminated Semiconductor/Electrolyte Junctions Modified by Electrodeposition of Microscopic Metal Grain , 1989 .

[22]  M. Lübke,et al.  On the etching of silicon by oxidants in ammonium fluoride solutions: a mechanistic study , 1988 .

[23]  P. Bartlett,et al.  Modulated Light Studies of the Electrochemistry of Semiconductors Theory and Experiment , 1987 .

[24]  Phl Peter Notten,et al.  The electrochemistry of InP in Br2/HBr solutions and its relevance to etching behaviour , 1987 .

[25]  D. Lincot,et al.  Recombination and charge transfer at the illuminated n-CdTe/electrolyte interface. Simplified kinetic model , 1987 .

[26]  F. Cardon,et al.  A Quantitative Analysis of Photoinduced Capacitance Peaks in the Impedance of the n ‐ GaAs Electrode , 1987 .

[27]  H. Gerischer,et al.  Surface stoichiometric changes of n-GaAs after anodic treatment: An XPS study , 1986 .

[28]  Arnaud Etcheberry,et al.  An ellipsometric study of the electrochemical surface modifications of n-InP , 1985 .

[29]  M. Takata,et al.  AC impedance theory for surface states at a semiconductor—liquid junction , 1985 .

[30]  P. Allongue,et al.  Band-edge shift and surface charges at illuminated n-GaAs/aqueous electrolyte junctions: surface-state analysis and simulation of their occupation rate , 1985 .

[31]  P. Allongue,et al.  Quantitative Comparison of Fermi Level Pinning at GaAs / Metal and GaAs / Liquid Junctions , 1984 .

[32]  D. Lincot,et al.  Study of CdTe/aqueous electrolyte interface in the absence of a redox system: influence of superficial layer and surface states , 1984 .

[33]  Phl Peter Notten,et al.  Hole injection reactions and the potential distribution at the p-GaAs/electrolyte interface under anodic polarization , 1984 .

[34]  P. Clechet,et al.  Electrochemical and Photoelectrochemical Behavior and Selective Etching of III–V Semiconductors in H 2 O 2 as Redox System , 1984 .

[35]  Phl Peter Notten,et al.  Surface Charging Effects during Photoanodic Dissolution of n ‐ GaAs Electrodes , 1983 .

[36]  F. W. Ostermayer,et al.  The Photoelectrochemical Oxidation of (100), (111), and (1̅1̅1̅) n ‐ InP and n ‐ GaAs , 1983 .

[37]  S. Morrison,et al.  Anodic properties of n-Si and n-Ge electrodes in HF solution under illumination and in the dark , 1983 .

[38]  K. W. Frese Electrochemical Studies of Photocorrosion of n ‐ CdSe , 1983 .

[39]  Y. Nakato,et al.  Surface Intermediates of an n‐Type Gallium Phosphide Electrode as Related with the Shifts of the Surface Band Energy Induced by Oxidants in Solution , 1981 .

[40]  H. Tsubomura,et al.  Photoanodic Dissolution Reaction of an n‐Type Gallium Phosphide Electrode and Its Effect on Energies of the Electronic Bands at the Surface , 1980 .

[41]  A. Vervaet,et al.  Some Electrochemical Processes at the n- and p-InP Electrodes. , 1978 .

[42]  H. Gerischer,et al.  The mechanisms of the decomposition of semiconductors by electrochemical oxidation and reduction , 1968 .