Nowadays, roughness control presents a huge challenge for the lithography step. For advanced nodes, this morphological aspect reaches the same order of magnitude than the Critical Dimension. Hence, the control of roughness needs an adapted metrology. In this study, specific samples with designed roughness have been manufactured using e-beam lithography. These samples have been characterized with three different methodologies: CD-SEM, OCD and SAXS. The main goal of the project is to compare the capability of each of these techniques in terms of reliability, type of information obtained, time to obtain the measurements and level of maturity for the industry.