Catastrophic latchup in CMOS analog-to-digital converters

Heavy-ion latchup is investigated for analog-to-digital converters. Differences in cross section for various ions show that charge is collected at depths beyond 50 /spl mu/m, causing the cross section to be underestimated unless long-range ions are used. Current distributions, thermal imaging, and diagnostic tests with a pulsed laser were used to identify latchup-sensitive regions. Latchup in one of the circuit types was catastrophic, even when the power was turned off within 2 ms of a latchup event. Examination of damaged devices with a scanning electron microscope showed that the failures occurred in metallization and contact regions. Current density for failure agrees with pulsed current metallization stress data in the literature.

[1]  D. K. Nichols,et al.  Latchup in CMOS Integrated Circuits , 1985 .

[2]  R. Koga,et al.  Numerical Simulation of SEU Induced Latch-Up , 1986, IEEE Transactions on Nuclear Science.

[3]  T. Chapuis,et al.  Latch-up on CMOS/EPI devices , 1990 .

[4]  Roberto Menozzi,et al.  Layout dependence of CMOS latchup , 1988 .

[5]  R. Koga,et al.  The Effect of Elevated Temperature on Latchup and Bit Errors in CMOS Devices , 1986, IEEE Transactions on Nuclear Science.

[6]  Xavier Aragones,et al.  Experimental comparison of substrate noise coupling using different wafer types , 1999 .

[7]  Allan H. Johnston,et al.  The influence of VLSI technology evolution on radiation-induced latchup in space systems , 1996 .

[8]  G. Bruguier,et al.  Single particle-induced latchup , 1996 .

[9]  R. Koga,et al.  Ion-induced sustained high current condition in a bipolar device , 1994 .

[10]  B. L. Gregory,et al.  Latch-Up in CMOS Integrated Circuits , 1973 .

[11]  A. H. Johnston,et al.  Latchup in CMOS from single particles , 1990 .

[12]  A. Ochoa,et al.  Snap-Back: A Stable Regenerative Breakdown Mode of MOS Devices , 1983, IEEE Transactions on Nuclear Science.

[13]  R. Koga,et al.  Heavy ion induced snapback in CMOS devices , 1989 .

[14]  A. H. Johnston,et al.  The effect of temperature on single-particle latchup , 1991 .

[15]  Todd L. Brooks,et al.  A cascaded sigma-delta pipeline A/D converter with 1.25 MHz signal bandwidth and 89 dB SNR , 1997 .

[16]  J. Bernstein,et al.  Short-time failure of metal interconnect caused by current pulses , 1993, IEEE Electron Device Letters.

[17]  P. S. Winokur,et al.  Three-dimensional simulation of charge collection and multiple-bit upset in Si devices , 1994 .

[18]  M. Shoga,et al.  Theory of Single Event Latchup in Complementary Metal-Oxide Semiconductor Integrated Circuits , 1986, IEEE Transactions on Nuclear Science.