Semiconductor tunneling structure with self-assembled quantum dots for multi-logic cellular automata module

We proposed and analyzed a semiconductor multi-barrier tunneling structure, which is incorporated with a quantum dot layer for a cellular automata logic module. Both in-plane and cross plane directions of tunneling in the self-assembled quantum dot layer were taken into consideration. Nonlinear I-V characteristics as a result of tunneling of a multi-cell system were simulated and used for the modular-logic construction. Elemental units, "AND," "OR" and "EXCHANGE" gate operations where shown. In addition, we demonstrated a set of local transition rules for use in one logic module driven by the edge bias. The stability of the scheme with respect to material structure imperfections is discussed.