论文信息 - Influence of Surface Recombination on Forward Current–Voltage Characteristics of Mesa GaN $\hbox{p}^{+}\hbox{n}$ Diodes Formed on GaN Free-Standing Substrates - 字舞流文

Influence of Surface Recombination on Forward Current–Voltage Characteristics of Mesa GaN $\hbox{p}^{+}\hbox{n}$ Diodes Formed on GaN Free-Standing Substrates

T. Mishima | T. Nakamura | R. Tsuchiya | T. Ishigaki | T. Tsuchiya | K. Mochizuki | K. Nomoto | A. Terano | Y. Hatakeyama | H. Katayose | N. Kaneda