Radiation aspects and performance of GaN power converters and RFICs for airborne and space applications

The paper discusses advances of testing GaN on Si switches for MHz-power-converter technologies for satellite applications. Radiation testing is discussed for technologies operated up to 600 V for power conversion suitable for compact power converter designs. Promising results have been obtained with respect of radiation stability for GaN switches on Si substrates. Further GaN mm-wave PA technologies suitable for up to Eband communication links and space-born tube drivers are demonstrated with the space-specific technology requirements incorporated for packaging while maintaining the performances. Further, representative Mm-wave RF-MMIC designs operating at E-band are being discussed for operation between 70 and 84 GHz based on this technology. With the advances in reliability demonstrated in parallel these circuits become relevant for space operation.

[1]  M. Tack,et al.  AlGaN/GaN power device technology for high current (100+ A) and high voltage (1.2 kV) , 2016, 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

[2]  Rudiger Quay,et al.  A GaN-Based 10.1MHz Class-F-1 300 W Continuous Wave Amplifier Targeting Industrial Power Applications , 2016, 2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

[3]  S. Wagner,et al.  GaN-based E-band power amplifier modules , 2016, 2016 46th European Microwave Conference (EuMC).

[4]  Rudiger Quay,et al.  Monolithically integrated power circuits in high-voltage GaN-on-Si heterojunction technology , 2017 .