Copper interconnect microanalysis and electromigration reliability performance due to the impact of TLP ESD
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S. Redkar | I. Manna | E. Chua | Suat Cheng Khoo Sherry | P. Tan | S-C Tan Carol | I. Manna | S. Redkar | S. Ansari | P-Y Tan | E-C Chua | S-C Tan Carol | S. Ansari
[1] S.H. Voldman. ESD robustness and scaling implications of aluminum and copper interconnects in advanced semiconductor technology , 1997, Proceedings Electrical Overstress/Electrostatic Discharge Symposium.
[2] Steven H. Voldman,et al. High-current transmission line pulse characterization of aluminum and copper interconnects for advanced CMOS semiconductor technologies , 1998, 1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173).
[3] C. Hu,et al. Characterization of VLSI circuit interconnect heating and failure under ESD conditions , 1996, Proceedings of International Reliability Physics Symposium.
[4] Kaustav Banerjee,et al. Microanalysis of VLSI interconnect failure modes under short-pulse stress conditions , 2000, 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059).
[5] Alvin Leng Sun Loke,et al. Electromigration of submicron Damascene copper interconnects , 1998, 1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216).