Impacts of noble gas dilution on Si film structure prepared by atmospheric-pressure plasma enhanced chemical transport

To control the structure of poly-Si films prepared by the atmospheric-pressure plasma enhanced chemical transport (APECT) method, we have investigated the effects of noble gas (He or Ar) dilution on film structure and plasma characteristics. The deposition rate in the noble gas dilution APECT method depends mainly on the hydrogen concentration in the process gas mixture. Diluting with noble gas changes the Si film morphology dramatically. When is decreased, the ring-like RHEED pattern becomes strongly spotty, indicating the epitaxial Si growth. It is found that the film structure can be modified by varying not only but also the noble gas element.

[1]  S. Miyazaki,et al.  Insights into the high-rate growth of highly crystallized silicon films from inductively coupled plasma of H2-diluted SiH4 , 2006 .

[2]  M. Niwano,et al.  Infrared spectroscopy study of adsorption of silane on Si(001) , 2002 .

[3]  R. Schropp,et al.  Thin film micro- and polycrystalline silicon nip cells on stainless steel made by hot-wire chemical vapour deposition , 2006 .

[4]  Jhantu Kumar Saha,et al.  Effect of substrate bias on high-rate synthesis of microcrystalline silicon films using a high-density microwave SiH4/H2 plasma , 2006, Journal of Physics D: Applied Physics.

[5]  M. Takai,et al.  Effect of higher-silane formation on electron temperature in a silane glow-discharge plasma , 2000 .

[6]  R. Reedy,et al.  Low-temperature silicon homoepitaxy by hot-wire chemical vapor deposition with a Ta filament , 2006 .

[7]  U. Fantz,et al.  Spectroscopic diagnostics and modelling of silane microwave plasmas , 1998 .

[8]  V. S. Gathen,et al.  Time dependence of rotational state populations of excited hydrogen molecules in an RF excited plasma reactor , 2001 .

[9]  A. Huczko,et al.  A study of chromic oxide decomposition in an RF argon plasma , 1986 .

[10]  S. Vepřek,et al.  The preparation of thin layers of Ge and Si by chemical hydrogen plasma transport , 1968 .

[11]  Tadahiro Ohmi,et al.  Total Room Temperature Wet Cleaning for Si Substrate Surface , 1996 .

[12]  W. Kessels,et al.  Film growth precursors in a remote SiH/sub 4/ plasma used for high-rate deposition of hydrogenated amorphous silicon , 2000 .

[13]  Y. Mori,et al.  Influence of H2/SiH4 Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma Chemical Vapor Deposition , 2006 .

[14]  E. Yoon,et al.  Surface roughness and defect morphology in electron cyclotron resonance hydrogen plasma cleaned (100) silicon at low temperatures , 1995 .

[15]  H. Toyoda,et al.  High-speed μc-Si films deposition and large-grain poly-Si films deposition by surface wave discharge , 2007 .

[16]  Kenji Yamamoto,et al.  Thin film Si solar cell fabricated at low temperature , 2000 .

[17]  A. Kruithof,et al.  Determination of the townsend. Ionization coefficient α for mixtures of neon and argon , 1937 .

[18]  H. Ohmi,et al.  Silicon film formation by chemical transport in atmospheric-pressure pure hydrogen plasma , 2007 .

[19]  M. Niwano,et al.  Hydrogen adsorption and desorption on Si(100) and Si(111) surfaces investigated by in situ surface infrared spectroscopy , 1999 .

[20]  Y. Sumiyoshi,et al.  Diode laser spectroscopy of SiH3 in the 4.5 μm region , 1994 .

[21]  M. Hori,et al.  Absolute concentration and loss kinetics of hydrogen atom in methane and hydrogen plasmas , 2001 .

[22]  T. E. Sharp.  Potential-energy curves for molecular hydrogen and its ions , 1970 .

[23]  U. Fantz,et al.  Spectroscopic diagnostics of the vibrational population in the ground state of and molecules , 1998 .

[24]  H. Ohmi,et al.  High‐rate preparation of thin Si films by atmospheric‐pressure plasma enhanced chemical transport , 2008 .

[25]  George,et al.  Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces. , 1988, Physical review. B, Condensed matter.