论文信息 - Effective Work Function Modulation by Aluminum Ion Implantation on Hf-Based High- $k$/Metal Gate pMOSFET - 字舞流文

Effective Work Function Modulation by Aluminum Ion Implantation on Hf-Based High- $k$/Metal Gate pMOSFET

C. Chou | C. H. Yu | C. T. Lin | C. M. Lai | Y. W. Chen | C. Hsu | T. Wu | T. Chiang | L. Cheng | W. Chang