论文信息 - A large signal non-quasi-static MOS model for RF circuit simulation

A large signal non-quasi-static MOS model for RF circuit simulation

A large-signal non-quasi-static (NQS) model for RF CMOS circuit simulation is presented that can be built from channel segments described by conventional QS models like BSIM3 or MOS Model 9. This large-signal NQS model is shown to give a very accurate prediction of the high-frequency behaviour of the intrinsic transconductance, the power gain and input resistance.

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