Threading dislocation and lattice stress modulation of Si based GaN material with AlPN nucleation layer

[1]  L. Guo,et al.  Monolithically Integrating III‐Nitride Quantum Structure for Full‐Spectrum White LED via Bandgap Engineering Heteroepitaxial Growth , 2023, Laser & Photonics Reviews.

[2]  D. Nirmal,et al.  Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review , 2022, Materials Science in Semiconductor Processing.

[3]  Markus Pristovsek Wurtzite Al1xGa, 2022, Journal of Crystal Growth.

[4]  Tao Chen,et al.  Strain Release in GaN Epitaxy on 4° Off‐Axis 4H‐SiC , 2022, Advances in Materials.

[5]  L. Guo,et al.  Application of patterned sapphire substrate for III-nitride light-emitting diodes. , 2022, Nanoscale.

[6]  Zehong Wan,et al.  InGaN quantum well with gradually varying indium content for high-efficiency GaN-based green light-emitting diodes. , 2022, Optics letters.

[7]  A. Subagio,et al.  Plasma-Assisted MOCVD Growth of Non-Polar GaN and AlGaN on Si(111) Substrates Utilizing GaN-AlN Buffer Layer , 2022, Coatings.

[8]  H. Kuo,et al.  Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration , 2021, Micromachines.

[9]  Shengjun Zhou,et al.  Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes , 2021 .

[10]  M. Pristovsek,et al.  Wurtzite AlPyN1−y: a new III-V compound semiconductor lattice-matched to GaN (0001) , 2020, Applied Physics Express.

[11]  A. Bose,et al.  Elimination of the Low Resistivity of Si Substrates in GaN HEMTs by Introducing a SiC Intermediate and a Thick Nitride Layer , 2020, IEEE Electron Device Letters.

[12]  O. Ambacher,et al.  Monolithic Integrated AlGaN/GaN Power Converter Topologies on High‐Voltage AlN/GaN Superlattice Buffer , 2020, physica status solidi (a).

[13]  Jichun Ye,et al.  Polarity control and fabrication of lateral polarity structures of III-nitride thin films and devices: progress and prospects , 2020, Journal of Physics D: Applied Physics.

[14]  B. Vasile,et al.  Defect Structure Determination of GaN Films in GaN/AlN/Si Heterostructures by HR-TEM, XRD, and Slow Positrons Experiments , 2020, Nanomaterials.

[15]  Hui Yang,et al.  Wafer-scale crack-free 10 µm-thick GaN with a dislocation density of 5.8  ×  107 cm−2 grown on Si , 2019, Journal of Physics D: Applied Physics.

[16]  Han Yan,et al.  Highly efficient GaN-based high-power flip-chip light-emitting diodes. , 2019, Optics express.

[17]  J. Čechal,et al.  Temperature effect on Al predose and AlN nucleation affecting the buffer layer performance for the GaN-on-Si based high-voltage devices , 2019, Japanese Journal of Applied Physics.

[18]  A. R. Degheidy,et al.  Pressure Dependence of Mechanical Properties in AlP and AlSb Semiconductors , 2019, Silicon.

[19]  S. Fan,et al.  Coordinated stress management and dislocation control in GaN growth on Si (111) substrates by using a carbon nanotube mask. , 2019, Nanoscale.

[20]  Cheul‐Ro Lee,et al.  Impact of Al Pre-Deposition Layer on Crystalline Quality of GaN Grown on Si(111) Substrates. , 2019, Journal of Nanoscience and Nanotechnology.

[21]  Wenliang Wang,et al.  Stress and dislocation control of GaN epitaxial films grown on Si substrates and their application in high-performance light-emitting diodes , 2019, Journal of Alloys and Compounds.

[22]  N. Tansu,et al.  First-principle electronic properties of dilute-P AlNP deep ultraviolet semiconductor , 2018 .

[23]  K. Termentzidis,et al.  Impact of screw and edge dislocations on the thermal conductivity of individual nanowires and bulk GaN: a molecular dynamics study. , 2018, Physical chemistry chemical physics : PCCP.

[24]  D. Nirmal,et al.  A survey of Gallium Nitride HEMT for RF and high power applications , 2017 .

[25]  V. Hùng,et al.  Investigation of thermodynamic and mechanical properties of AlyIn1−yP alloys by statistical moment method , 2017 .

[26]  J. Bläsing,et al.  Observation of individual stacking faults in GaN microcrystals by x-ray nanodiffraction , 2017 .

[27]  J. Weyher,et al.  The importance of structural inhomogeneity in GaN thin films , 2016 .

[28]  Y. Bogumilowicz,et al.  Threading dislocations in GaAs epitaxial layers on various thickness Ge buffers on 300 mm Si substrates , 2016 .

[29]  David Vanderbilt,et al.  Correct implementation of polarization constants in wurtzite materials and impact on III-nitrides , 2016, 1605.07629.

[30]  Xiaojuan Sun,et al.  Influence of threading dislocations on GaN-based metal-semiconductor-metal ultraviolet photodetectors , 2011 .

[31]  Colin J. Humphreys,et al.  On the origin of threading dislocations in GaN films , 2009 .

[32]  Xi‐Cun Wang,et al.  PEG-SO3H as catalyst for the Beckmann rearrangement and dehydration of oximes , 2009 .

[33]  H. Yang,et al.  Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type GaN? , 2007 .

[34]  Xin Wang,et al.  Effect of threading defects on InGaN∕GaN multiple quantum well light emitting diodes , 2007 .

[35]  Michael Wraback,et al.  GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition , 2006 .

[36]  P. Ruterana,et al.  The atomic and electronic structure of dislocations in Ga-based nitride semiconductors , 2006 .

[37]  Colin J. Humphreys,et al.  Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3 , 2006 .

[38]  S. Chua,et al.  Control and improvement of crystalline cracking from GaN thin films grown on Si by metalorganic chemical vapor deposition , 2006 .

[39]  C. Bolognesi,et al.  Ozone passivation of slow transient current collapse in AlGaN∕GaN field-effect transistors: The role of threading dislocations and the passivation mechanism , 2006 .

[40]  Robert F. Davis,et al.  Structural TEM study of nonpolar a-plane gallium nitride grown on (112_0) 4H-SiC by organometallic vapor phase epitaxy , 2005 .

[41]  Pierre Gibart,et al.  Metal organic vapour phase epitaxy of GaN and lateral overgrowth , 2004 .

[42]  Jerry R. Meyer,et al.  Band parameters for nitrogen-containing semiconductors , 2003 .

[43]  Min Xie,et al.  Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire , 2003 .

[44]  Qizhang Huang,et al.  Determination of twist angle of in-plane mosaic spread of GaN films by high-resolution X-ray diffraction , 2003 .

[45]  James S. Speck,et al.  Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates , 2002 .

[46]  Christiane Poblenz,et al.  Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope , 2002 .

[47]  James H. Edgar,et al.  Substrates for gallium nitride epitaxy , 2002 .

[48]  Pierre Gibart,et al.  Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy , 2001 .

[49]  Shreepad Karmalkar,et al.  Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate , 2001 .

[50]  Masao Ikeda,et al.  Characterization of threading dislocations in GaN epitaxial layers , 2000 .

[51]  Fanyu Meng,et al.  Direct observation of formation of threading dislocations from stacking faults in GaN layer grown on (0 0 0 1) sapphire , 2011 .