论文信息 - Band-dispersion-originated photoelectron intensity oscillations during Si epitaxial growth on Si(100) - 字舞流文

Band-dispersion-originated photoelectron intensity oscillations during Si epitaxial growth on Si(100)

M. Suemitsu | Y. Takegawa | Y. Takakuwa | N. Miyamoto | Y. Enta | H. Kato | Daisei Shoji

[1] M. Niwano,et al. Photoelectron intensity oscillation during chemical vapor deposition on Si(100) surface with Si2H6 , 1994 .

[2] R. Uhrberg,et al. Photoelectron spectroscopy of surface states on semiconductor surfaces , 1988 .