Ku-band AlGaN/GaN HEMT with over 30W

AlGaN/GaN high electron mobility transistors (HEMTs) were developed for Ku-band applications. The operating voltage characteristics in CW operating conditions were investigated. The developed AlGaN/GaN HEMT with combined two dies of 12 mm gate periphery exhibits output power of over 30 W with a power added efficiency (PAE) of 12% under VDS = 30 V, CW operating condition at 14.25 GHz, and a gain compression level of 3 dB.

[1]  Improved fabrication process for obtaining high power density AlGaN/GaN HEMTs , 2003, 25th Annual Technical Digest 2003. IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003..

[2]  M. Schlechtweg,et al.  Ka-band AlGaN/GaN HEMT high power and driver amplifier MMICs , 2005, European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005.

[3]  G. Nagy,et al.  5W GaN MMIC for Millimeter-Wave Applications , 2006, 2006 IEEE Compound Semiconductor Integrated Circuit Symposium.

[4]  M. Oppermann,et al.  20W GaN HPAs for Next Generation X-Band T/R-Modules , 2006, 2006 IEEE MTT-S International Microwave Symposium Digest.

[5]  S. Sano,et al.  A 500W Push-Pull AlGaN/GaN HEMT Amplifier for L-Band High Power Application , 2006, 2006 IEEE MTT-S International Microwave Symposium Digest.

[6]  H. Massler,et al.  A coplanar X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate , 2005, IEEE Microwave and Wireless Components Letters.

[7]  J. Breckling.  The Analysis of Directional Time Series: Applications to Wind Speed and Direction , 1989 .

[8]  S. Mizuno,et al.  High temperature operation of AlGaN/GaN HEMT , 2005, IEEE MTT-S International Microwave Symposium Digest, 2005..

[9]  H. Miyamoto,et al.  30GHz-band 5.8W high-power AlGaN/GaN heterojunction-FET , 2004, 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).

[10]  T. Nakayama,et al.  Improved power performance for a recessed-gate AlGaN-GaN heterojunction FET with a field-modulating plate , 2004, IEEE Transactions on Microwave Theory and Techniques.

[11]  S. Yokokawa,et al.  An over 200-W output power GaN HEMT push-pull amplifier with high reliability , 2004, 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).

[12]  K. Matsunaga,et al.  C-band Single-Chip GaN-FET Power Amplifiers with 60-W Output Power , 2005, IEEE MTT-S International Microwave Symposium Digest, 2005..

[13]  Takuma Suzuki,et al.  C-band AIGaN/GaN HEMTs with 170W Output Power , 2005 .

[14]  Y.-F. Wu,et al.  3.5-watt AlGaN/GaN HEMTs and amplifiers at 35 GHz , 2003, IEEE International Electron Devices Meeting 2003.

[15]  J. Abdou,et al.  A GaN HFET Device Technology on 3" SiC Substrates for Wireless Infrastructure Applications , 2006, 2006 IEEE MTT-S International Microwave Symposium Digest.

[16]  Stephen I. Long,et al.  A GaN HEMT Class F Amplifier at 2 GHz With > 80% PAE , 2007, IEEE J. Solid State Circuits.

[17]  T. Takagi,et al.  S and C band over 100 W GaN HEMT 1-chip high power amplifiers with cell division configuration , 2005, European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005.

[18]  K. Takagi,et al.  X-band AlGaN/GaN HEMT with over 80W Output Power , 2006, 2006 IEEE Compound Semiconductor Integrated Circuit Symposium.

[19]  J. Palmour,et al.  High power demonstration at 10 GHz with GaN-AlGaN HEMT hybrid amplifiers , 2000, 58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526).

[20]  Umesh K. Mishra,et al.  Very-high power density AlGaN/GaN HEMTs , 2001 .

[21]  H. Schumacher,et al.  Coplanar AlGaN/GaN HEMT power amplifier MMIC at X-band , 2004, 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).

[22]  H.P. Moyer,et al.  Ka-band MMIC power amplifier in GaN HFET technology , 2004, 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).

[23]  Suzuki Takuma,et al.  C-band AlGaN/GaN HEMTs with 170W Output Power , 2005 .

[24]  H.A. Hung,et al.  4-Watt Ka-Band AlGaN/GaN Power Amplifier MMIC , 2006, 2006 IEEE MTT-S International Microwave Symposium Digest.

[25]  P. Saunier,et al.  25 W X-band GaN on Si MMIC , 2005 .

[26]  M. Stein.  The Analysis of Directional Time Series: Applications to Wind Speed and Direction , 1991 .