Improvement on InGaN‐based light emitting diodes using p‐GaN layer grown at low temperature in full N2 environment

A method is suggested to improve the characteristics of light emitting diodes (LEDs) by using p‐GaN structure with heavily Mg‐doping grown at low temperature in full N2 environment. The LED exhibits a 36.4% enhancement in light output power (LOP) at 222 A cm−2 due to the higher hole concentration as compared to the normal p‐GaN layer. Meanwhile, the experimental results prove that the optimized LED structure shows reduced efficiency droop behavior, smaller peak wavelength blueshift and narrower electroluminescence (EL) spectrum broadening.

[1]  Jing Li,et al.  Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer , 2013 .

[2]  Woo Jin Ha,et al.  Promotion of hole injection enabled by GaInN/GaN light-emitting triodes and its effect on the efficiency droop , 2011 .

[3]  Hao-Chung Kuo,et al.  Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers , 2011 .

[4]  Hadis Morkoç,et al.  On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers , 2008 .

[5]  Yue-Kai Huang,et al.  Efficiency droop behaviors of InGaN∕GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness , 2007 .

[6]  D. A. Zakheim,et al.  Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping , 2007 .

[7]  Yan-Kuin Su,et al.  Improved light output power of InGaN/GaN MQW LEDs by lower temperature p-GaN rough surface , 2004 .

[8]  Peter Blood,et al.  Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm , 2003, Applied Physics Letters.

[9]  Jen-Inn Chyi,et al.  Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells , 2001 .

[10]  T. Seong,et al.  Investigation into the Role of Low-Temperature GaN in n-GaN/InGaN/p-GaN Double-Heterostructure Light-Emitting Diodes , 2000 .

[11]  S. Denbaars,et al.  Heavy doping effects in Mg-doped GaN , 2000 .

[12]  Matthew D. McCluskey,et al.  Interdiffusion of In and Ga in InGaN quantum wells , 1998 .

[13]  Cheul‐Ro Lee,et al.  Characteristics of Mg-doped GaN epilayers grown with the variation of Mg incorporation , 1998 .

[14]  L. Romano,et al.  Phase Separation in InGaN/GaN Multiple Quantum Wells , 1998 .

[15]  R. Dupuis,et al.  Growth of low resistivity p-type GaN by metal organic chemical vapour deposition , 1997 .

[16]  R. Street,et al.  Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor deposition , 1996 .