论文信息 - Large-Area (3.3 mm x 3.3 mm) Power MOSFETs in 4H-SiC - 字舞流文

Large-Area (3.3 mm x 3.3 mm) Power MOSFETs in 4H-SiC

Anant K. Agarwal | John W. Palmour | Jim Richmond | Mrinal K. Das | Nelson S. Saks | A. Agarwal | S. Ryu | J. Richmond | M. Das | J. Palmour | L. Lipkin | John R. Williams | N. Saks | Lori A. Lipkin | Sei Hyung Ryu | N.S. Saks