A study on mechanism of resistance distribution characteristics of oxide-based resistive memory
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[1] R. Waser,et al. Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications , 2016 .
[2] Daniele Ielmini,et al. Resistive switching memories based on metal oxides: mechanisms, reliability and scaling , 2016 .
[3] Young Jae Kwon,et al. Pt/Ta2O5/HfO2−x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash , 2015, Advanced materials.
[4] M. R. Uddin,et al. A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory , 2013, Nature Communications.
[5] Myoung-Jae Lee,et al. Theoretical studies on distribution of resistances in multilevel bipolar oxide resistive memory by Monte Carlo method , 2013 .
[6] U. Chung,et al. Modeling for multilevel switching in oxide-based bipolar resistive memory , 2012, Nanotechnology.
[7] Kinam Kim,et al. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures. , 2011, Nature materials.
[8] U-In Chung,et al. Highly Uniform Switching of Tantalum Embedded Amorphous Oxide Using Self-Compliance Bipolar Resistive Switching , 2011, IEEE Electron Device Letters.
[9] Myoung-Jae Lee,et al. Modeling for bipolar resistive memory switching in transition-metal oxides , 2010 .