Assembly and reliability of flip chip solder joints using miniaturized Au/Sn bumps

Flip chip assembly experiments using small electroplated Au/Sn bumps, i.e. bumps of 50 /spl mu/m in diameter and less, are carried out. After plating the bumps consist of a Au layer with a thinner Sn layer on top. Normally a reflow process in which the bumps are heated up to more than 280/spl deg/C follows after which the bumps consist of a thick Au layer with an eutectic solder cap on top and a /spl zeta/-phase layer in between. However, the experiments prove that due to geometrical reasons as plated bumps rather than reflowed ones shall be used for bump sizes below 50 /spl mu/m in diameter in order to achieve a high yield flip chip assembly process. Furthermore thermal cycling tests were carried out using flip chip assemblies consisting of a GaAs die soldered to a BCB thin film Silicon substrate. Assemblies with Au/Sn bumps of the size of 30 /spl mu/m and 50 /spl mu/m in diameter were tested this way.

[1]  Herbert Reichl,et al.  Fluxless flip-chip attachment techniques using the Au/Sn metallurgy , 1995, Seventeenth IEEE/CPMT International Electronics Manufacturing Technology Symposium. 'Manufacturing Technologies - Present and Future'.

[2]  S. Nakahara,et al.  Room temperature interdiffusion studies of Au/Sn thin film couples , 1981 .

[3]  L. Buene Characterization of evaporated gold-tin films , 1977 .

[4]  B. Dyson Diffusion of Gold and Silver in Tin Single Crystals , 1966 .

[5]  W. Heinrich,et al.  W-band flip-chip interconnects on thin-film substrate , 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

[6]  L. Buene Interdiffusion and phase formation at room temperature in evaporated gold-tin films , 1977 .

[7]  Herbert Reichl,et al.  Calculation of shape and experimental creation of AuSn solder bumps for flip chip applications , 2002, 52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345).