论文信息 - Saturation of gain in In0.02Ga0.98N/In0.16Ga0.84N MQW plasmas - 字舞流文

Saturation of gain in In0.02Ga0.98N/In0.16Ga0.84N MQW plasmas

T. Someya | Y. Arakawa | K. Kyhm | R. Taylor | Y. Arakawa | J. F. Ryan

[1] Shuji Nakamura,et al. Dynamics of optical gain in InxGa1−xN multi-quantum-well-based laser diodes , 2000 .

[2] Shuji Nakamura,et al. Dimensionality of excitons in laser-diode structures composed of In x Ga 1-x N multiple quantum wells , 1999 .

[3] G. Mohs,et al. On the gain mechanism in GaN based laser diodes , 1998 .

[4] N. A. Gun’ko,et al. Theoretical study of the threshold characteristics of InGaN multiquantum well lasers , 1998 .

[5] G. Mohs,et al. Failure of the modal gain model in a GaN based laser diode , 1997 .

[6] Y. Dankner. Optical gain and saturation of photoexcited type-II superlattice , 1995 .

[7] R. F. Leheny,et al. Direct Determination of Optical Gain in Semiconductor Crystals , 1971 .

[8] W. W. Rigrod,et al. Gain Saturation and Output Power of Optical Masers , 1963 .