论文信息 - AlGaN-GaN heterostructure FETs with offset gate design

AlGaN-GaN heterostructure FETs with offset gate design

The DC performance of AlGaN-GaN heterojunction field effect transistors (HFETs) with an offset gate design is reported for the first time. The breakdown voltage for these offset gate devices exhibited a strong dependence on the gate-to-drain separation and the maximum transconductance increased almost linearly with the source-to-gate distance.

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