Ion-beam induced damage and annealing behaviour in SiC

Abstract The paper presents the damage accumulation in silicon carbide (SiC) as a function of the ion mass, the ion energy and the implantation temperature. A defect-interaction and amorphization model is used to analyse the dose dependence of defect production, as obtained by the various methods. The temperature dependence of the amorphization dose can be represented assuming a thermally enhanced annealing within the primary collision cascades. On the basis of such a model, a critical implantation temperature is obtained, which was found to vary with the ion mass and the implantation energy. The concurrent influence of implantation temperature and ion fluence on the resulting damage distribution in SiC is demonstrated. The damage annealing of ion implanted SiC is investigated for low, medium and high damage concentrations. The effect of the implantation temperature and the concentration of implanted atoms, both influencing the kind of defects obtained after implantation, on the annealing behaviour is analysed.

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