Characterization of NbTiN Thin Films Deposited on Various Substrates

Niobium titanium nitride (NbTiN) thin films were deposited on a selection of different substrates to explore the optimum depositing condition of high-quality NbTiN thin films. The NbTiN films deposited on MgO, Al<sub>2</sub>O<sub>3</sub>, and fused quartz substrates showed excellent superconducting properties with a high <i>T</i><sub>C</sub> of 14.7 K, 14.5 K, 15.2 K, and low resistivity ρ<sub>20 K</sub> of 55 μΩcm, 116 μΩcm, 78 μΩcm, respectively. The chemical composition, crystal structure, and relationship between superconducting properties and crystal structure were systematically investigated by changing the N<sub>2</sub>/(Ar+N<sub>2</sub>) ratio in sputtering gases. The lattice parameter systematically changed as N<sub>2</sub>/(Ar+N<sub>2</sub>) ratio was varied. We found that the superconducting properties depend on the lattice parameter, and the film with the best superconducting properties had a lattice parameter of 4.380 Å (on MgO), 4.345 Å (on Al<sub>2</sub>O<sub>3</sub>), 4.335 Å (on fused quartz).

[1]  Masahide Sasaki,et al.  Large sensitive-area NbN nanowire superconducting single-photon detectors fabricated on single-crystal MgO substrates , 2008 .

[2]  Michael G. Tanner,et al.  Enhanced telecom wavelength single-photon detection with NbTiN superconducting nanowires on oxidized silicon , 2010 .

[3]  J. Ziman Principles of the Theory of Solids , 1965 .

[4]  Masahide Sasaki,et al.  Superconducting NbTiN Nanowire Single Photon Detectors with Low Kinetic Inductance , 2009 .

[5]  Lars Hultman,et al.  Development of preferred orientation in polycrystalline TiN layers grown by ultrahigh vacuum reactive magnetron sputtering , 1995 .

[6]  S. Takada,et al.  Properties of NbTiN thin films prepared by reactive DC magnetron sputtering , 2001 .

[7]  H. Terai,et al.  INTERFACE AND TUNNELING BARRIER HEIGHTS OF NBN/ALN/NBN TUNNEL JUNCTIONS , 1999 .

[8]  Takafumi Kojima,et al.  Three Quanta Sensitivity Superconductor–Insulator–Superconductor Mixer for the 0.78–0.95 THz Band , 2009 .

[9]  V. Roddatis,et al.  Texture formation in sputter-deposited (Nb0.7,Ti0.3)N thin films , 2002 .

[10]  H. Maezawa,et al.  Characterization of NbTiN thin films prepared by reactive DC-magnetron sputtering , 2003 .

[11]  S. Polyakov,et al.  Optimization of RF- and DC-sputtered NbTiN films for integration with Nb-based SIS junctions , 1999, IEEE Transactions on Applied Superconductivity.

[12]  Yoshinori Uzawa,et al.  Superconducting properties and crystal structures of single‐crystal niobium nitride thin films deposited at ambient substrate temperature , 1996 .

[13]  B. Cullity,et al.  Elements of X-ray diffraction , 1957 .

[14]  H. Maezawa,et al.  Process simulation of reactive DC magnetron sputtering for thin film deposition of niobium-titanium nitride , 2005, IEEE Transactions on Applied Superconductivity.

[15]  Wenlei Shan,et al.  Performance of Terahertz Waveguide SIS Mixers Employing Epitaxial NbN Films and Nb Junctions , 2009, IEEE Transactions on Applied Superconductivity.