Work function and barrier heights of transition metal silicides

The work function of 13 polycrystalline transition metal silicides was measured by photoemission in uhv. Their values are discussed in relationship to their Schottky barrier heights on n-Si. While there appears to be a weak correlation for a certain group of transition metal silicides, the values of the 5d-noble metal silicides including some of the lattice matched Ni silicides appear to be completely uncorrelated. Experimental values of work functions are compared to the values proposed previously by Freeouf.

[1]  M. Schlüter.  Theoretical models of Schottky barriers , 1982 .

[2]  B. Tsaur,et al.  Low Schottky barrier of rare‐earth silicide on n‐Si , 1981 .

[3]  S. P. Murarka,et al.  Refractory silicides for integrated circuits , 1980 .

[4]  H. Michaelson.  Relation between an atomic electronegativity scale and the work function , 1978 .

[5]  P. Schmid.  Silicide-silicon Schottky barriers , 1985 .

[6]  T. Siegrist,et al.  The crystal structure and some properties of ReSi2 , 1983 .

[7]  Reduction in the effective barrier height in PtSi-p-Si Schottky diodes by using low energy ion implantation , 1982 .

[8]  A. Miedema,et al.  On the heat of formation of solid alloys , 1975 .

[9]  A. Miedema.  On the heat of formation of solid alloys. II , 1976 .

[10]  F. d'Heurle,et al.  Silicides of ruthenium and osmium: Thin film reactions, diffusion, nucleation, and stability , 1982 .

[11]  S.M.Sze,et al.  Surface States and Barrier Height of Metal‐Semiconductor Systems , 1965 .

[12]  G. Rubloff,et al.  Microscopic Compound Formation at the Pd-Si(111) Interface , 1979 .

[13]  P. Tove.  SIMPLE DIPOLE MODEL FOR BARRIER HEIGHTS OF SILICIDE–SILICON AND METAL–SILICON BARRIERS , 1983 .

[14]  C. Champness,et al.  Relation between barrier height and work function in contacts to selenium , 1985 .

[15]  J. M. Andrews,et al.  Chemical Bonding and Structure of Metal-Semiconductor Interfaces , 1975 .

[16]  C. Petersson,et al.  Barrier heights to silicon, of ruthenium and its silicide , 1982 .

[17]  A. Searcy,et al.  Stability of Solid Phases in the Ternary Systems of Silicon and Carbon with Rhenium and the Six Platinum Metals , 1962 .

[18]  S. Murarka.  Heats of formation of transition-metal silicides , 1982 .

[19]  J. Best.  Lattice‐matched heterostructures as Schottky barriers: HgSe/CdSe , 1979 .

[20]  R. Fowler,et al.  The Analysis of Photoelectric Sensitivity Curves for Clean Metals at Various Temperatures , 1931 .

[21]  Barrier height control of Pd2 Si/Si schottky diodes using diffusion from doped Pd , 1980 .

[22]  K. Tu,et al.  Formation and Schottky behavior of manganese silicides on n‐type silicon , 1982 .

[23]  J. Freeouf.  Silicide Schottky barriers: An elemental description☆ , 1980 .

[24]  King-Ning Tu,et al.  Barrier heights and silicide formation for Ni, Pd, and Pt on silicon , 1981 .

[25]  R. H. Williams.  The schottky barrier problem , 1982 .

[26]  R. T. Tung,et al.  Single crystal silicide silicon interfaces: Structures and barrier heights , 1985 .

[27]  F. d'Heurle,et al.  The Schottky‐barrier height of the contacts between some rare‐earth metals (and silicides) and p‐type silicon , 1981 .

[28]  G. Ottaviani.  Review of binary alloy formation by thin film interactions , 1979 .

[29]  C. Lupis.  Chemical thermodynamics of materials , 1983 .

[30]  P. Viktorovitch,et al.  Schottky barrier heights: Are they really correlated with any other parameter? , 1984 .

[31]  P. Ho.  Chemical bonding and Schottky barrier formation at transition metal-silicon interfaces , 1983 .

[32]  S. M. Sze,et al.  Physics of semiconductor devices , 1969 .

[33]  K. Tu,et al.  Structure and growth kinetics of RhSi on single crystal, polycrystalline, and amorphous silicon substrates , 1984 .

[34]  G. Ottaviani,et al.  Interfacial Reaction and Schottky Barrier in Metal-Silicon Systems , 1980 .

[35]  Ho,et al.  Correlation of Schottky-barrier height and microstructure in the epitaxial Ni silicide on Si(111). , 1985, Physical review letters.

[36]  H. Michaelson.  The work function of the elements and its periodicity , 1977 .

[37]  D. Morgan,et al.  Correlation between Schottky barrier heights on compound semiconductors and metal and semiconductor electronegativities , 1981 .

[38]  K. Tu,et al.  Comparison of the three classes (rare earth, refractory and near-noble) of silicide contacts , 1982 .

[39]  R. T. Tung.  Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor Interfaces , 1984 .