论文信息 - Langmuir-type evaporation of CdTe epilayers

Langmuir-type evaporation of CdTe epilayers

Langmuir-type evaporation of (100) oriented epilayers has been investigated. An activation energy of 1.98+or-0.18 eV for both Cd and Te2 desorption has been determined. A quantitative analysis of the excess Cd desorption in the beginning of the CdTe evaporation from initially stoichiometric CdTe has been carried out yielding an upper limit for the Cd deficit in the epilayer of 2-5%.

K. Hingerl | H. Sitter | W. Faschinger | P. Juza

[1] C. Summers,et al. Nucleation kinetics of molecular‐beam epitaxially grown (001) ZnTe and CdTe surfaces , 1989 .

[2] C. Summers,et al. Properties of undoped and Sb-doped CdTe surfaces prepared by conventional and photo-assisted molecular beam epitaxy , 1989 .

[3] J. Dubowski,et al. Dependence of the vacuum sublimation rate of CdTe upon crystallographic orientation , 1988 .

[4] M. A. Herman,et al. Growth mechanism in atomic layer epitaxy (III) reevaporation of Cd and Te from CdTe (111) surfaces and thick elemental deposits monitored by quadrupole-mass spectrometry , 1988 .

[5] H. Pascher,et al. Growth and characterization of high-quality CdTe epilayers on GaAs substrates by hot-wall epitaxy , 1988 .

[6] J. Arias,et al. The first observation of reflection high‐energy electron diffraction intensity oscillations during the growth and sublimation of CdTe , 1987 .

[7] D. Ehrlich,et al. Laser photosublimation of compound semiconductors , 1987 .

[8] F. Bailly,et al. Model for heteroepitaxial growth of CdTe on (100) oriented GaAs substrate , 1986 .

[9] C. Summers,et al. Surface stoichiometry and reaction kinetics of molecular beam epitaxially grown (001) CdTe surfaces , 1986 .

[10] R. F. Brebrick,et al. Partial pressures and Gibbs free energy of formation for congruently subliming CdTe(c) , 1964 .

[11] P. Goldfinger,et al. Mass spectrometric and knudsen-cell vaporization studies of group 2B-6B compounds , 1963 .